AUIRFS8409

Description：MOSFET N-CH 40V 195A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube

SKU:d632996586d0 Category: Single FETs, MOSFETs Brand: Infineon Technologies

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Product introduction

AUIRFS8409 is listed in the Single FETs, MOSFETs range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is MOSFET N-CH 40V 195A D2PAK. Review the specifications below when checking this part for your BOM.

Single FETs, MOSFETs specifications for AUIRFS8409

Description：MOSFET N-CH 40V 195A D2PAK
Series：HEXFET®
Mfr：Infineon Technologies
Package：Tube
FET Type：N-Channel
Technology：MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)：40 V
Current - Continuous Drain (Id) @ 25°C：195A (Tc)
Drive Voltage (Max Rds On, Min Rds On)：10V
Rds On (Max) @ Id, Vgs：1.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id：3.9V @ 250µA
Gate Charge (Qg) (Max) @ Vgs：450 nC @ 10 V
Vgs (Max)：±20V
Input Capacitance (Ciss) (Max) @ Vds：14240 pF @ 25 V
FET Feature：-
Power Dissipation (Max)：375W (Tc)
Operating Temperature：-55°C ~ 175°C (TJ)
Grade：Automotive
Qualification：AEC-Q101
Mounting Type：Surface Mount
Supplier Device Package：PG-TO263-3
Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Single FETs, MOSFETs datasheet and documents for AUIRFS8409

AUIRFS8409

Single FETs, MOSFETs Overview

The AUIRFS8409 is an N-channel HEXFET Power MOSFET designed for automotive applications. It features a maximum drain-source voltage of 40 V and a continuous drain current of 195 A (package limited) or 409 A (silicon limited). The typical on-resistance at 25°C is 0.97 mΩ, with a maximum of 1.2 mΩ. Key electrical parameters include a gate threshold voltage range of 2.2 V to 3.9 V, total gate charge of 300 nC, and a junction-to-case thermal resistance of 0.40 °C/W. The device supports a maximum operating temperature of 175°C.

Single FETs, MOSFETs Feature Summary

Utilizes advanced process technology to achieve extremely low on-resistance per silicon area.
Designed specifically for automotive applications with high reliability.
Capable of repetitive avalanche operation up to the maximum junction temperature.
Features fast switching speed and lead-free RoHS compliance.

Single FETs, MOSFETs Applications

Electric Power Steering (EPS)
Battery Switch
Start/Stop Micro Hybrid Systems
Heavy Loads
DC-DC Applications

Single FETs, MOSFETs Procurement Notes

Verify the specific package variant required, as the base part number corresponds to multiple form factors including D2-Pak, TO-220, and TO-262. Confirm that the 'AU' prefix indicates adherence to automotive industry requirements regarding product discontinuance and process change notifications. Ensure the selected orderable part number matches the desired tube or tape and reel quantity.

Single FETs, MOSFETs Selection Notes

Select this component when designing circuits requiring a 40 V N-channel MOSFET with high current handling capabilities suitable for automotive environments. Consider the package-limited current rating of 195 A versus the silicon-limited rating of 409 A based on thermal management constraints. Evaluate the low on-resistance and fast switching characteristics for efficiency in power steering and DC-DC converter topologies.

Single FETs, MOSFETs Part Context

This device belongs to the HEXFET family of Power MOSFETs manufactured by Infineon Technologies (formerly International Rectifier). It is part of a broader portfolio of automotive-grade transistors engineered for robust performance under demanding conditions. The AUIRFS8409 shares design principles with other parts in the series, such as the AUIRFSL8409 and AUIRFB8409, differing primarily in physical packaging.

Single FETs, MOSFETs Replacement Considerations

Direct substitutes within the same series include AUIRFSL8409 (TO-262 package) and AUIRFB8409 (TO-220 package). Verify pinout compatibility and thermal resistance specifications when transitioning between these package variants to ensure proper heat dissipation and circuit functionality.