AUIRG4BC30S-S

$1.40

Description：IGBT
Series：*

SKU:8c43ae9f78bf Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT
Series：*
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：-
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：-
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：-
Package / Case：-
Supplier Device Package：-
Grade：-
Qualification：-

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AUIRG4BC30S-S

Overview

The AUIRG4BC30S-S is a standard speed Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a TO-262 (D2PAK) package and is qualified for automotive applications under the AEC-Q101 standard. The device supports a collector-to-emitter breakdown voltage of 600 V and delivers a continuous collector current of 34 A at a case temperature of 25°C, reducing to 18 A at 100°C. The typical saturation voltage is 1.4 V at 15 V gate drive and 18 A collector current. Maximum power dissipation reaches 100 W at 25°C and 42 W at 100°C. Operating junction temperatures range from -55°C to +150°C.

Feature Summary

Optimized for low operating frequencies below 1 kHz with minimum saturation voltage characteristics.
Automotive grade qualification compliant with AEC-Q101 standards.
Lead-free construction ensuring RoHS compliance.

Applications

PTC Heater systems
Discharge Switch circuits
Relay Replacements

Procurement Notes

Verify the specific ordering suffix when sourcing components. The 'S' variant corresponds to the D2PAK tube packaging, while 'SL' indicates the TO-262 tube format. Confirm that the procurement channel provides original manufacturer documentation to ensure the component meets the stated automotive qualification requirements.

Selection Notes

Select this component for designs requiring robust switching performance in low-frequency environments. Ensure the thermal management system can handle the specified junction-to-case thermal resistance. Verify that the gate drive circuitry aligns with the recommended 15 V operating voltage to achieve optimal saturation characteristics.

Part Context

This discrete IGBT belongs to the Generation 4 product line, designed to offer tighter parameter distribution compared to previous iterations. It combines high blocking voltage capabilities with efficient control characteristics suitable for industrial and consumer power electronics.

Replacement Considerations

Direct cross-compatibility should be verified against other 600V standard speed IGBTs in the TO-262 package. Check datasheets for matching VCES, IC ratings, and switching energy losses before substitution.