AUIRGP4066D1-E

Overview

The AUIRGP4066D1-E is an n-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, designed for automotive applications. It features Trench IGBT technology for low saturation voltage and switching losses. Key electrical parameters include a collector-emitter voltage of 600 V, a continuous collector current of 140 A at 25°C case temperature, and a nominal current of 75 A. The device supports a maximum junction temperature of 175 °C and offers a short circuit withstand time of at least 5 μs.

Feature Summary

• Utilizes Low VCE(on) Trench IGBT Technology to minimize conduction losses.
• Features a Soft Recovery Co-Pak Diode to reduce electromagnetic interference during switching.
• Provides rugged transient performance with a square Reverse Bias Safe Operating Area (RBSOA).
• Ensures excellent current sharing in parallel operation due to a positive VCE(on) temperature coefficient.

Applications

• Automotive motor control systems
• High-efficiency power conversion circuits
• Industrial inverters requiring wide switching frequency ranges

Procurement Notes

Verify the specific package variant required, as the base part number corresponds to TO-247AC while the -E suffix denotes TO-247AD. Confirm that the component meets the necessary AEC-Q101 qualification standards for your target automotive application. Ensure that ordering documentation explicitly references the complete part number to avoid discrepancies in package type or automotive compliance status.

Selection Notes

Select this component when designing circuits that demand high efficiency across a broad range of operating conditions. The combination of low switching losses and low on-state voltage makes it suitable for applications requiring high switching frequencies. Consider the thermal resistance characteristics and the need for adequate heat sinking to maintain junction temperatures within the specified limits during peak load operations.

Part Context

This device belongs to Infineon's portfolio of automotive-grade power semiconductors. It integrates an IGBT chip with a co-packaged diode in a single TO-247 package. The product line is engineered to meet stringent automotive reliability standards, ensuring robust performance in demanding environments such as electric vehicle powertrains and industrial drive systems.

Replacement Considerations

The AUIRGP4066D1 serves as the non-automotive equivalent to the AUIRGP4066D1-E. When substituting, verify if automotive qualification is mandatory for the application. Note that the -E suffix indicates a specific TO-247AD package configuration compared to the standard TO-247AC of the base model.

FAQ

What is the maximum short circuit withstand time for this device?

The device is rated for a minimum short circuit withstand time of 5 microseconds under specified test conditions.

Does the AUIRGP4066D1-E support parallel operation?

Yes, the device features a positive VCE(on) temperature coefficient, which facilitates excellent current sharing when multiple units are operated in parallel.

What is the difference between the AUIRGP4066D1 and AUIRGP4066D1-E packages?

The AUIRGP4066D1 uses the TO-247AC package, whereas the AUIRGP4066D1-E utilizes the TO-247AD package. Both contain the same semiconductor die but differ in physical housing dimensions.