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The AUIRGS30B60K is a single silicon Insulated Gate Bipolar Transistor (IGBT) designed for automotive applications, certified to the AEC-Q100 standard. It features a collector-emitter maximum voltage of 600 V and a continuous collector current of 78 A at 25°C. The device operates within a temperature range of -55°C to +150°C and utilizes a DPAK-3 (TO-252-3) surface-mount package. Key electrical parameters include a collector-emitter saturation voltage of 2.35 V, a gate-emitter voltage limit of ±20 V, and a power dissipation capacity of 370 W.
This component is officially listed as End-of-Life or discontinued by Infineon Technologies. Availability is restricted, and distributors may not stock this item in all regions. Engineers must verify current supply status through authorized channels before design finalization. Alternative solutions should be evaluated immediately to ensure long-term production viability.
Select this IGBT for high-current automotive applications requiring 600V blocking capability and ultrafast switching characteristics. Ensure the design accommodates the 2.35 V saturation voltage for thermal management. Verify that the PCB layout supports the DPAK-3 package and meets the required thermal resistance specifications for the intended operating environment.
The AUIRGS30B60K belongs to Infineon's automotive IGBT portfolio, specifically engineered for high-power density requirements. It integrates TRENCHSTOP™ technology to optimize switching losses and conduction drops. This part is distinct from general-purpose industrial IGBTs due to its strict automotive qualification standards and extended temperature range capabilities.
As this part is discontinued, engineers should consult Infineon's official replacement guides. Potential alternatives within the same family or newer generations with similar voltage and current ratings should be evaluated for pin compatibility and thermal performance.