AUIRGU4045D

Overview

The AUIRGU4045D is an automotive-qualified IGBT module featuring a co-packaged ultrafast soft recovery diode. It utilizes low VCE(sat) trench technology and operates with a maximum junction temperature of 175 °C. The device provides a collector-to-emitter breakdown voltage of 600 V, continuous collector current ratings of 12 A at 25°C case temperature and 6.0 A at 100°C, and a pulsed collector current capability of 18 A. It incorporates a 5 µs short-circuit safe operating area (SCSOA) and square reverse bias safe operating area (RBSOA). The integrated diode supports a continuous forward current of 8.0 A at 25°C and 4.0 A at 100°C, with a maximum forward current of 24 A.

Feature Summary

• Automotive qualification compliant with AEC-Q101 standards for enhanced reliability in vehicle environments.
• Integrated ultrafast soft recovery co-pack diode designed to minimize electromagnetic interference (EMI).
• Positive VCE(sat) temperature coefficient enabling excellent current sharing during parallel operation.
• Robust transient performance supported by a 5 µs SCSOA and square RBSOA characteristics.

Applications

• Motor control systems requiring rugged transient performance.
• High-efficiency power conversion circuits operating across wide load ranges.
• Applications necessitating high switching frequencies due to low switching losses.

Procurement Notes

Verify the specific package type required for the design, as the 'U' suffix denotes the I-Pak form factor while 'R' indicates D-Pak. Confirm that the application environment meets the specified thermal management requirements for the 175 °C maximum junction temperature. Ensure the gate drive circuitry aligns with the recommended VGE parameters to maintain the documented switching characteristics and safe operating areas.

Selection Notes

Select this component when automotive-grade reliability is mandatory alongside high-voltage switching capabilities. The choice between AUIRGU4045D and AUIRGR4045D depends strictly on the preferred mechanical footprint, specifically choosing the I-Pak for the former. Consider the thermal resistance values provided for both junction-to-case and junction-to-ambient configurations when designing the heat dissipation strategy for the target PCB or heatsink assembly.

Part Context

This part belongs to the AUIRG series of automotive-qualified insulated gate bipolar transistors. It represents a combination of Infineon's trench IGBT technology with optimized diode integration. The product line targets demanding industrial and automotive sectors where space constraints and thermal efficiency are critical design drivers.

Replacement Considerations

The datasheet lists AUIRGR4045D as the identical functional alternative differing only in package style (D-Pak versus I-Pak). No other cross-references or substitute part numbers are documented within the provided source material.

FAQ

What is the maximum short-circuit time the device can withstand?

The device features a 5 µs Short Circuit Safe Operating Area (SCSOA), allowing it to survive short-circuit events for up to 5 microseconds under specified conditions.

How does the VCE(sat) behave with temperature changes?

The AUIRGU4045D exhibits a positive VCE(sat) temperature coefficient, which facilitates balanced current distribution when multiple units are operated in parallel.

Is the integrated diode suitable for hard-switching applications?

Yes, the co-packaged diode is an ultrafast soft recovery type, specifically engineered to reduce switching losses and electromagnetic interference (EMI) during operation.