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Product Detailed Parameters
- Description：IGBT 1200V TO247-3
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The AUXKNG4PH50S-215 is an insulated gate bipolar transistor (IGBT) module manufactured by Infineon Technologies. It belongs to the XPT (Extended Plate Technology) family, designed for high-voltage applications up to 1200 V. The component features a specific collector-emitter saturation voltage characteristic optimized for low conduction losses at rated currents. It utilizes a standardized industrial mounting footprint compatible with common heatsink interfaces, ensuring reliable thermal management in power conversion systems.
Feature Summary
- XPT technology for reduced switching losses and improved short-circuit withstand capability
- Soft recovery fast diode integrated for efficient commutation
- High thermal cycling robustness for demanding environments
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the exact suffix designation against the manufacturer's current datasheet to confirm pinout compatibility and specific electrical tolerances. Ensure the procurement channel provides original packaging with intact moisture barrier indicators. Cross-reference the lot date code with the component's shelf life requirements before installation to prevent reliability issues during soldering processes.
Selection Notes
Select this module when application requirements demand high voltage blocking capability combined with moderate current handling in a compact form factor. Consider the thermal resistance characteristics relative to the available heatsinking solution. Evaluate the switching frequency constraints imposed by the device's soft recovery diode performance compared to alternative silicon or wide-bandgap technologies for the specific duty cycle requirements.
Part Context
This component is part of Infineon's discrete and module IGBT portfolio targeting medium-power industrial applications. It complements the company's broader range of power semiconductors used in energy conversion infrastructure. The XPT technology lineage represents a specific engineering approach to balancing voltage rating with on-state voltage drop, distinguishing it from standard field-stop designs.
Replacement Considerations
Direct replacements must match the 1200 V rating, physical mounting dimensions, and terminal configuration. Verify that substitute modules possess equivalent or superior short-circuit time ratings and thermal impedance values. Consult official cross-reference lists for approved equivalents within the same product family to ensure functional parity.
