B10G2022N10DLZ

Overview

The B10G2022N10DL is a 2-stage 10 W fully integrated Doherty MMIC utilizing Ampleon's LDMOS technology. It integrates the carrier and peaking devices, input splitter, output combiner, and matching networks within a single package. Designed for operation between 2110 MHz and 2170 MHz, it supports multi-carrier applications. Typical performance at Tcase = 25 °C includes a power gain of 31.3 dB to 31.7 dB, drain efficiency of 46.6% to 45.2%, and an ACPR5M of -29.8 dBc to -31.0 dBc under 1-carrier W-CDMA conditions with PAR = 9.9 dB.

Feature Summary

• Fully integrated Doherty architecture combining carrier and peaking stages with input/output splitters and combiners
• Independent bias control for carrier and peaking gate-source voltages
• Integrated electrostatic discharge (ESD) protection mechanisms
• High thermal stability with excellent ruggedness against load mismatch and wideband noise

Applications

• RF power MMIC for small cell base stations
• Multi-carrier and multi-standard GSM, W-CDMA, LTE, and NR systems in the 2110 MHz to 2170 MHz range

Procurement Notes

Verify the specific ordering suffix when purchasing. The 'Z' suffix indicates a tape and reel packing format with a minimum orderable quantity of 1000 pieces. Confirm RoHS compliance status directly on the manufacturer's website as referenced in the product details section of the datasheet.

Selection Notes

Select this component for designs requiring a compact, general-purpose Doherty solution in the 2110 MHz to 2170 MHz band. Ensure the application circuit maintains the specified case temperature limits and utilizes appropriate impedance matching networks to achieve the documented gain and efficiency metrics.

Part Context

This device belongs to Ampleon's portfolio of LDMOS-based monolithic microwave integrated circuits. It represents a specialized integration strategy for Doherty amplifiers, consolidating multiple discrete functions into a single LGA-7x7-20-2 package to reduce board space and simplify assembly for modern communication infrastructure.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided documentation. Designers should consult Ampleon technical support or official distributor catalogs for direct replacements or pin-compatible alternatives.

FAQ

What is the maximum load mismatch the device can withstand?

The B10G2022N10DL can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specific operating conditions.

How is the peaking stage bias controlled relative to the carrier?

The device allows independent control of the peaking bias, typically set such that VGSq(peaking) is approximately 0.45 V lower than VGSq(carrier).

What ESD classification does this component hold?

It holds a Charged Device Model (CDM) classification of C1 and a Human Body Model (HBM) classification of 1B.