B10G4750N12DLZ

Overview

The B10G4750N12DL is a 3-stage 12 W fully integrated Doherty MMIC utilizing Ampleon's LDMOS technology. It integrates the carrier and peaking devices, input splitter, output combiner, and output matching within a single package. Designed for broadband operation between 4700 MHz and 5000 MHz, it features independent control of carrier and peaking bias, high power gain, and 50 Ω impedance matching. The device includes integrated ESD protection and excellent thermal stability.

Feature Summary

• Integrated input splitter and output combiner simplify circuit design
• Independent control of carrier and peaking bias voltages
• High efficiency with excellent thermal stability
• Integrated electrostatic discharge (ESD) protection

Applications

• RF power amplification for multi-carrier small cell base stations
• Multi-standard support including GSM, W-CDMA, LTE, and NR in the 4700 MHz to 5000 MHz range

Procurement Notes

Verify the specific ordering suffix against official documentation before procurement. The 'Z' suffix indicates a packing description of TR13; 1000-fold; 16 mm; dry pack. Confirm that this packaging format aligns with your assembly line requirements and storage conditions. Always consult the most recent product data sheet for current availability and status updates.

Selection Notes

Select this component for applications requiring a general-purpose Doherty amplifier in the 4700 MHz to 5000 MHz band. Ensure the design accommodates the LGA-7x7-20-2 package outline and provides adequate ground connections for the exposed backside. Verify that the application circuit supports the required VDS and IDq settings for optimal performance.

Part Context

This part belongs to the B10G series of integrated Doherty MMICs from Ampleon. It is designed as a multiband solution suitable for modern wireless infrastructure. The device leverages advanced LDMOS technology to provide high power density and efficiency in a compact form factor compared to discrete solutions.

Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided datasheet. Consult Ampleon technical support or authorized distributors for qualified alternatives if this specific model is unavailable.

FAQ

What is the maximum load mismatch the device can withstand?

The B10G4750N12DL can withstand a load mismatch corresponding to VSWR = 10:1 through all phases under specified operating conditions.

How is the gate leakage current specified?

The gate leakage current (IGSS) is specified as a maximum of 140 nA when VGS is +9V/-5V and VDS is 0V.

What is the ESD sensitivity classification?

The device has a Charged Device Model (CDM) classification of C1 and a Human Body Model (HBM) classification of 1B.