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The B10H0608N40DYZ is a dual-section, two-stage fully integrated Doherty MMIC utilizing Ampleon's 50 V LDMOS technology. Designed for the 600 MHz to 800 MHz frequency range, it integrates carrier and peaking devices, input splitters, output combiners, and pre-matching networks within each section. The device operates with a drain-source voltage of 40 V to 52 V and features independent bias control for carrier and peaking stages. It delivers a typical power gain of 30 dB and an output power at 1 dB gain compression of 46.9 dBm. The component is housed in a 12 mm x 8 mm LGA-12x8-34-2 package.
Verify the specific ordering suffix YZ against official documentation to confirm packing details. The datasheet indicates this suffix corresponds to a reel quantity of 500 units in dry pack packaging. Confirm compatibility with standard surface-mount assembly processes and ensure adherence to ESD handling protocols during procurement and storage.
Select this component for applications requiring high linearity and large instantaneous bandwidth in the 600 MHz to 800 MHz range. Ensure the design supports the mandatory quad-combined configuration for optimal performance. Verify that the PCB layout accommodates the 12 mm x 8 mm LGA outline and provides adequate thermal management for the junction-to-case thermal resistance.
This part belongs to the B10H series of integrated Doherty MMICs from Ampleon. It represents a solution for general-purpose driving in multiband cellular infrastructure. The device leverages advanced LDMOS technology to provide high power gain and efficiency while maintaining ruggedness against load mismatches and wideband noise conditions typical in modern base station environments.
Consult the official Ampleon datasheet for confirmed substitute part numbers. No direct replacements are listed in the provided source material.