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BA1A4M-T is listed in the Single Bipolar Transistors range at ChipApex. The manufacturer field lists Renesas Electronics Corporation. Its product description is TRANS DIGITAL BJT NPN 50V 100MA. Review the specifications below when checking this part for your BOM.
Single Bipolar Transistors specifications for BA1A4M-T
- Description：TRANS DIGITAL BJT NPN 50V 100MA
- Series：*
- Mfr：Renesas Electronics Corporation
- Package：Bulk
- Transistor Type：-
- Current - Collector (Ic) (Max)：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Vce Saturation (Max) @ Ib, Ic：-
- Current - Collector Cutoff (Max)：-
- DC Current Gain (hFE) (Min) @ Ic, Vce：-
- Power - Max：-
- Frequency - Transition：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
Single Bipolar Transistors datasheet and documents for BA1A4M-T
Single Bipolar Transistors Overview
The BA1A4M-T is an NPN transistor with built-in bias resistors, designed for medium-speed switching circuits. It features a DC current gain (HFE) ranging from 80 to 230 and a collector saturation voltage (VCE(sat)) of 0.05 V. The component is lead-free and RoHS compliant.
Single Bipolar Transistors Feature Summary
- Built-in bias resistor configuration
- NPN transistor equivalent circuit
- Optimized for medium-speed switching applications
Single Bipolar Transistors Applications
- Medium-speed switching circuits
Single Bipolar Transistors Procurement Notes
Verify the specific suffix '-T' against official Renesas documentation to confirm tape-and-reel packaging details. Ensure the part number matches the exact electrical specifications provided in the datasheet, as suffixes can indicate variations in packaging or processing. Cross-reference with authorized distributors to confirm availability and authenticity.
Single Bipolar Transistors Selection Notes
Select this component for designs requiring integrated biasing to simplify circuit layout. Consider the specified current gain range and saturation voltage when determining drive requirements. Verify thermal performance and package constraints against the application's power dissipation needs.
Single Bipolar Transistors Part Context
The BA1A4M series belongs to Renesas Electronics' discrete semiconductor portfolio, focusing on efficient switching solutions. These transistors integrate bias resistors to reduce external component count, offering a compact solution for digital logic interfacing and signal switching tasks in consumer and industrial electronics.
Single Bipolar Transistors Replacement Considerations
Consult official cross-reference lists for direct substitutes. Generic replacements must match the NPN type, built-in resistor functionality, and electrical parameters such as HFE and VCE(sat). Verify pinout compatibility and package dimensions before integration.
Explore related parts through Bipolar (BJT), Transistors, Discrete Semiconductor Products, all product categories.
