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The BA277,335 is a silicon VHF band microwave mixer diode manufactured by NXP USA Inc. It is designed for high-frequency applications requiring efficient signal mixing and switching. The component features a low capacitance of 1.2pF, ensuring minimal signal distortion at VHF frequencies. It supports a maximum power dissipation of 715mW, allowing for robust operation in demanding RF environments. This device is packaged in the SOD-523 surface-mount format, facilitating automated assembly and compact circuit board layouts.
Verify the specific ordering suffix to confirm the tape-and-reel packaging configuration. Ensure the procurement documentation explicitly references the NXP USA Inc. manufacturer designation. Cross-reference the part number with official NXP datasheets to validate the 1.2pF capacitance and 715mW power rating specifications before finalizing orders.
Select this component when designing VHF band mixers requiring low parasitic capacitance. The SOD-523 package is suitable for high-density PCB layouts. Verify thermal management requirements against the 715mW dissipation limit. Ensure compatibility with existing RF circuit topologies that utilize similar switching diodes.
This part belongs to NXP's portfolio of general-purpose and switching diodes. It is specifically categorized under microwave mixer diodes for VHF bands. The BA277 series includes various packaging options, with the BA277,335 representing a specific reel configuration within this family.
Publicly confirmed substitute part numbers are not available in the provided data. Evaluate other NXP BA277 variants or comparable VHF mixer diodes from different manufacturers based on capacitance and power ratings.