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The BA282-TAP is a silicon planar diode manufactured by Vishay General Semiconductor - Diodes Division. It is housed in the DO-204AH (DO-35) axial leaded package. The device features a maximum repetitive peak reverse voltage of 35 V and a maximum forward current of 100 mA. Key electrical characteristics include a low differential forward resistance, low diode capacitance, and high reverse impedance. The component supports a maximum junction temperature of 150 °C and a storage temperature range from -55 °C to +150 °C.
Verify the specific ordering suffix, as variants such as BA282-TR and BA282-TAP exist within the same family. Confirm that the required package matches the DO-204AH (DO-35) specification. Check manufacturer documentation for availability status, as some listings indicate this product may be obsolete or no longer manufactured. Ensure the selected variant meets the required voltage and current ratings for the intended circuit design.
Select this component when low capacitance and high reverse impedance are critical for VHF applications. The DO-35 package is suitable for through-hole mounting. Consider the 35 V reverse voltage limit and 100 mA forward current capability during circuit design. Verify thermal constraints against the specified junction temperature limits to ensure long-term reliability in the target environment.
The BA282-TAP belongs to the BA28x series of silicon planar diodes from Vishay. This series is designed for RF applications requiring fast switching and low signal loss. The DO-35 package provides a standard form factor for axial leaded implementations. Other members of the family may offer different voltage or current ratings while sharing similar structural features.
Public confirmed substitute part numbers are not available in the provided data. Users should consult official Vishay documentation for direct replacements or verify compatibility with alternative RF diodes offering similar capacitance and voltage specifications.