BA592E6433HTMA1

Overview

The BA592E6433HTMA1 is a silicon PIN diode from Infineon Technologies, designed for RF switching applications. It features a single diode configuration housed in an SOD-323-2 surface-mount package. Key electrical parameters include a maximum reverse voltage of 35 V and a forward current rating of 100 mA. The device exhibits a maximum junction capacitance of 1.1 pF and a typical carrier lifetime of 0.12 µs. Operating temperatures range from -55 °C to +125 °C, with a maximum power dissipation capability inherent to the small-signal package.

Feature Summary

• PIN diode technology optimized for high-speed RF switching
• Low junction capacitance for minimal signal attenuation in off-state
• Compact SMD packaging suitable for automated assembly

Applications

• RF switch circuits in communication equipment
• Attenuator modules requiring fast switching speeds
• Signal routing in wireless infrastructure

Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm lot traceability and check for EOL status implications on long-term supply continuity. Ensure storage conditions comply with moisture sensitivity level requirements prior to reflow soldering.

Selection Notes

Select this component when low capacitance and fast recovery are critical for RF signal integrity. Compare series resistance values against circuit loss requirements. Ensure the SOD-323-2 footprint matches the PCB layout constraints and thermal management needs of the target application.

Part Context

This part belongs to the BA592 series of PIN diodes manufactured by Infineon Technologies. It is specifically engineered for radio frequency applications where rapid switching between conductive and non-conductive states is required. The device utilizes silicon technology to provide reliable performance in compact electronic designs.

Replacement Considerations

BA592E6433XT is listed as an alternative part number within the same product family.