BA679S-GS08

Overview

The BA679S-GS08 is a PIN diode manufactured by Vishay General Semiconductor - Diodes Division. It features a minimum breakdown voltage of 30 V and a nominal diode capacitance of 0.5 pF. The maximum forward resistance is specified at 8000 Ω, measured at a test frequency of 100 MHz. The device supports surface mount installation and operates at a maximum temperature of 125 °C. Terminal plating consists of Tin/Lead (Sn/Pb).

Feature Summary

• PIN diode configuration for RF switching applications.
• Surface mount package design for automated assembly.

Applications

• RF signal switching circuits.
• Attenuator modules in communication systems.

Procurement Notes

Verify the specific GS08 suffix against official Vishay documentation to confirm terminal material and compliance status. Ensure the component meets project requirements for leaded terminations and operating temperature limits before integration into designs.

Selection Notes

Select this component when a low capacitance PIN diode with a 30 V breakdown rating is required. Compare the 8000 Ω forward resistance specification against circuit impedance needs. Verify that the surface mount form factor fits the available PCB footprint constraints.

Part Context

This part belongs to the Vishay PIN diode family designed for high-frequency applications. It shares core electrical characteristics with similar models like the BA679, though packaging and termination details may vary. The GS08 suffix typically denotes specific ordering or packaging variations within the manufacturer's catalog.

Replacement Considerations

The BA679 is listed as a closely related component with identical breakdown voltage and capacitance. Verify if the forward resistance difference (5000 Ω vs 8000 Ω) impacts the target application performance before substitution.