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The BA779-HG3-08 is an RF PIN diode manufactured by Vishay General Semiconductor - Diodes Division, housed in a SOT-23-3 surface-mount package. It features a single pair series connection configuration with a maximum reverse voltage of 30V and a forward current rating of 50 mA. Key electrical parameters include a capacitance of 0.5pF at 0V reverse bias measured at 100MHz, and a resistance of 50 Ohm at 1.5mA forward current also at 100MHz. The device is designed for high-frequency applications and operates within a junction temperature range up to 125°C.
Verify the manufacturer part number BA779-HG3-08 against official Vishay documentation to ensure authenticity. Confirm that the SOT-23-3 package type matches the design requirements. Check RoHS3 compliance status if environmental regulations apply to the specific project. Ensure the supplier provides valid traceability documents for the component batch.
Select this component when a low-capacitance RF PIN diode is required for series connection applications. The 0.5pF capacitance at 0V makes it suitable for high-frequency signals where minimal signal loss is critical. Consider the 50 Ohm resistance at 1.5mA for impedance matching needs. The 30V reverse voltage rating defines the maximum operating limits for the RF circuit design.
This component belongs to the Vishay RF PIN diode family, specifically designed for radio frequency applications. It utilizes the standard SOT-23-3 footprint common in modern electronics manufacturing. The HG3 suffix indicates lead-free and halogen-free construction compliant with international environmental standards.
No public confirmed substitute part numbers are available in the provided data.