BA782-HG3-08

RF Diode Overview

The BA782-HG3-08 is a silicon epitaxial planar band switching diode manufactured by Vishay General Semiconductor - Diodes Division. It is designed for electric bandswitching in radio and TV tuners operating within the 50 MHz to 1000 MHz frequency range. The device features AEC-Q101 qualification, ensuring suitability for automotive applications. Key electrical parameters include a maximum reverse voltage of 35 V and a continuous forward current rating of 100 mA. At a forward current of 100 mA, the forward voltage reaches a maximum of 1000 mV. The component exhibits low dynamic forward resistance, measuring 0.7 Ω at 3 mA and 0.5 Ω at 10 mA across the specified frequency band. Reverse capacitance is maintained at 1.5 pF at 1 V and 1.25 pF at 3 V, both measured at 1 MHz.

RF Diode Feature Summary

• AEC-Q101 qualified for automotive reliability
• Low dynamic forward resistance over wide frequency range
• Small reverse capacitance largely independent of reverse voltage

RF Diode Applications

• Electric bandswitching in radio tuners
• Electric bandswitching in TV tuners
• High-speed switching applications in the 50 MHz to 1000 MHz range

RF Diode Procurement Notes

Verify the specific ordering suffix against official documentation to confirm packaging options. The HG3 designation indicates compliance with RoHS directives and halogen-free requirements. Confirm that the package type matches the required SOD-123 footprint for your circuit design. Ensure the component meets the necessary thermal characteristics for your intended operating environment.

RF Diode Selection Notes

Select this component when designing circuits requiring fast switching speeds and minimal signal distortion in the VHF/UHF bands. The low series inductance and stable dynamic resistance make it suitable for high-frequency signal routing. Consider the 35 V reverse voltage limit and 100 mA forward current capability when sizing components for power handling requirements.

RF Diode Part Context

This part belongs to the BA782/BA783 family of band switching diodes from Vishay. The BA782 variant specifically offers lower dynamic forward resistance compared to the BA783 model. Both variants share similar physical dimensions and electrical limits but differ slightly in their RF performance characteristics. The HG3 suffix denotes automotive-grade qualification and environmental compliance.

RF Diode Replacement Considerations

Direct replacements include the BA782-G3-08 for commercial grade applications or the BA782S for alternative packaging. Verify pinout compatibility and ensure the substitute meets the same AEC-Q101 standards if automotive use is required.