BA782S-E3-18

RF Diode Overview

The BA782S-E3-18 is a silicon epitaxial planar PIN diode switch manufactured by Vishay General Semiconductor - Diodes Division. It operates within the 50 to 1000 MHz frequency range and utilizes an SOD-323 surface-mount package. Key electrical parameters include a maximum reverse voltage of 35 V, a continuous forward current rating of 100 mA, and a junction temperature limit of 125 °C. At 100 mA forward current, the forward voltage reaches a maximum of 1000 mV. The device exhibits low dynamic forward resistance, typically 0.7 Ω at 3 mA and 0.5 Ω at 10 mA across the operating band.

RF Diode Feature Summary

• AEC-Q101 qualified for automotive reliability standards
• Low series inductance suitable for high-frequency applications
• RoHS-compliant commercial grade construction

RF Diode Applications

• Electric bandswitching in radio tuners
• Bandswitching in TV tuners
• RF switching circuits in the 50 to 1000 MHz range

RF Diode Procurement Notes

Verify component authenticity through authorized distribution channels. Confirm RoHS compliance status matches project requirements. Ensure storage conditions adhere to moisture sensitivity level guidelines. Validate that the SOD-323 footprint aligns with PCB design specifications before finalizing orders.

RF Diode Selection Notes

Select this component when low dynamic forward resistance and minimal capacitance are required for frequencies up to 1 GHz. Compare against the BA783S variant if slightly different resistance characteristics better suit the specific circuit impedance needs. Verify thermal management capabilities for continuous operation near the 125 °C junction limit.

RF Diode Part Context

This part belongs to the BA782S/BA783S family of band switching diodes designed for RF applications. The suffix E3 indicates lead-free and RoHS compliance, while -18 specifies tape-and-reel packaging containing 10,000 units per 13-inch reel. These devices share mechanical dimensions but differ in internal doping profiles affecting resistance values.

RF Diode Replacement Considerations

The BA783S serves as a direct functional alternative within the same package. Other manufacturers' PIN diodes in the SOD-323 form factor may require verification of capacitance and inductance parameters to ensure compatibility with existing RF designs.

RF Diode FAQ

What is the typical diode capacitance for the BA782S?

The typical diode capacitance is 1.5 pF at 1 V reverse bias and 1.25 pF at 3 V reverse bias, measured at 1 MHz.

How does the dynamic forward resistance vary with current?

At a forward current of 3 mA, the typical dynamic forward resistance is 0.7 Ω. This decreases to 0.5 Ω when the forward current increases to 10 mA.

Is the BA782S-E3-18 suitable for automotive applications?

Yes, the BA782S device family is AEC-Q101 qualified, indicating suitability for automotive electronic environments.