BA782S-HE3-08

RF Diode Overview

The BA782S-HE3-08 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in the SOD-323 surface-mount package. It operates with a maximum reverse voltage of 35 V and a continuous forward current of 100 mA, supporting junction temperatures up to 125 °C. Electrical characteristics include a typical forward voltage of 1000 mV at 100 mA, a reverse current of 50 nA at 20 V, and a dynamic forward resistance ranging from 0.5 Ω to 0.7 Ω across the 50 MHz to 1000 MHz frequency range.

RF Diode Feature Summary

• Designed for electric bandswitching applications in radio and television tuners within the 50 MHz to 1000 MHz frequency spectrum.
• Features constant and minimal dynamic forward resistance over a wide range of operating frequencies and forward currents.
• Exhibits small reverse capacitance that remains largely independent of applied reverse voltage variations.

RF Diode Applications

• Bandswitching circuits in radio tuners
• Bandswitching circuits in television tuners

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm RoHS compliance and AEC-Q101 qualification status against official datasheets. Ensure storage conditions remain within specified limits to maintain device integrity prior to assembly.

RF Diode Selection Notes

Select this component when low dynamic forward resistance and stable capacitance are required for high-frequency bandswitching tasks. The SOD-323 package suits space-constrained designs requiring surface-mount integration. Validate thermal performance against the 125 °C junction temperature limit during operation.

RF Diode Part Context

This part belongs to the BA782S/BA783S series of band switching diodes. The HE3 suffix indicates RoHS compliance and AEC-Q101 automotive qualification, distinguishing it from the commercial grade E3 variant. Both variants share identical electrical specifications but differ in certification levels.

RF Diode Replacement Considerations

The BA782S-E3-08 serves as a commercial-grade alternative without automotive qualification. Cross-referencing requires matching the SOD-323 package and verifying equivalent dynamic resistance and capacitance values for the target frequency range.

RF Diode FAQ

What is the dynamic forward resistance of the BA782S at 10 mA?

At a forward current of 10 mA and frequencies between 50 MHz and 1000 MHz, the dynamic forward resistance is typically 0.5 Ω.

How does the reverse capacitance vary with voltage?

The reverse capacitance is small and largely independent of the reverse voltage, measuring approximately 1.25 pF at 1 MHz and 3 V reverse bias.