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The BA783-HG3-08 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in an SOD-123 case. It is designed for electric bandswitching in radio and TV tuners within the 50 to 1000 MHz frequency range. The device features AEC-Q101 qualification, a maximum reverse voltage of 35 V, and a forward continuous current rating of 100 mA. Key electrical parameters include a typical dynamic forward resistance of 1.2 Ω at 3 mA and 0.9 Ω at 10 mA across the operating frequency. Diode capacitance is typically 1.2 pF at 1 MHz with 3 V reverse bias.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering code matches the required package and reel specifications. Ensure compliance with RoHS and Halogen-Free standards as defined by Vishay documentation before integration into production systems.
Select this component when low dynamic forward resistance and stable capacitance are critical for RF switching applications between 50 and 1000 MHz. The AEC-Q101 qualification makes it suitable for automotive environments requiring high reliability under specified thermal conditions.
This part belongs to the BA782/BA783 series of band switching diodes from Vishay Semiconductors. The HG3 suffix indicates the device is green, halogen-free, and AEC-Q101 qualified, distinguishing it from the commercial grade G3 variant.
The BA782-HG3-08 serves as a functional alternative within the same series, offering similar characteristics but with a lower typical dynamic forward resistance of 0.7 Ω at 3 mA.