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Product Detailed Parameters
- Description：RF DIODE PIN 35V SOD-323
- Series：-
- Mfr：Vishay General Semiconductor - Diodes Division
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：35V
- Current - Max：100 mA
- Capacitance @ Vr, F：1.2pF @ 3V, 1MHz
- Resistance @ If, F：1.2Ohm @ 3mA, 1GHz
- Power Dissipation (Max)：-
- Operating Temperature：125°C (TJ)
- Package / Case：SC-76, SOD-323
- Supplier Device Package：SOD-323
- Grade：-
- Qualification：-
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Overview
The BA783S-HE3-18 is a silicon epitaxial planar band switching diode manufactured by Vishay Semiconductors in an SOD-323 case. It is AEC-Q101 qualified and RoHS-compliant. The device operates with a reverse voltage of 35 V and a forward continuous current of 100 mA. Electrical characteristics include a maximum forward voltage of 1000 mV at 100 mA, a reverse current of 50 nA at 20 V, and a diode capacitance of 1.2 pF at 3 V reverse bias. Dynamic forward resistance ranges from 0.9 Ω to 1.2 Ω depending on the forward current within the 50 MHz to 1000 MHz frequency range.
Feature Summary
- Designed for electric bandswitching applications in radio and TV tuners across the 50 MHz to 1000 MHz frequency spectrum.
- Features constant and minimal dynamic forward resistance over a wide range of frequencies and forward currents.
- Provides small reverse capacitance that remains largely independent of the applied reverse voltage.
Applications
- Electric bandswitching in radio tuners
- Electric bandswitching in TV tuners
Procurement Notes
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific HE3 suffix indicates AEC-Q101 qualification status. Ensure the -18 packaging code matches the required reel specifications for automated assembly processes.
Selection Notes
Select this component when AEC-Q101 automotive qualification is required for RF switching applications. Compare the 1.2 pF capacitance and 1.2 Ω dynamic resistance against alternative models like the BA782S if lower impedance is necessary. Verify thermal limits align with the intended operating environment.
Part Context
This part belongs to the BA782S and BA783S series of band switching diodes. The family shares similar mechanical dimensions and general operational principles but differs in specific electrical parameters such as capacitance and dynamic resistance values.
Replacement Considerations
BA782S-HE3-18 offers comparable performance with slightly lower dynamic resistance and capacitance values. Verify parameter differences against circuit requirements before substitution.
FAQ
What is the maximum operating junction temperature?
The maximum junction temperature (Tj) is 125 °C.
How does the reverse capacitance vary with voltage?
The reverse capacitance is small and largely independent of the reverse voltage.
What is the series inductance value?
The series inductance across the case is 2.5 nH.
