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BA895E6327 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 50V SCD-80. Review the specifications below when checking this part for your BOM.
The BA895E6327 is a silicon PIN diode manufactured by Infineon Technologies, designed for RF switching and attenuation applications. It features a peak reverse voltage of 50 V and a maximum forward current of 50 mA. The device exhibits a typical junction capacitance of 0.6 pF at 10 V reverse bias and 1 MHz frequency. Its series resistance is specified as 7 Ohms at 10 mA forward current and 100 MHz. Operating within a temperature range of -55°C to +150°C junction temperature, it is housed in the PG-SOD323-3D surface-mount package.
Verify component authenticity through official Infineon channels or authorized distributors. Confirm RoHS compliance status and check for end-of-life notifications prior to procurement. Ensure storage conditions meet semiconductor handling standards to maintain device integrity during supply chain transit.
Select this component when designing RF systems requiring a 50 V reverse voltage rating and low junction capacitance. The SOD323-3D package is appropriate for space-constrained PCB layouts. Verify that the 50 mA forward current capability aligns with the specific circuit requirements.
This part belongs to the BA895 series of PIN diodes from Infineon Technologies. It shares functional similarities with other devices in the BA595 and BA885 families but offers specific electrical characteristics tailored for distinct RF performance profiles within the same packaging format.
Publicly confirmed substitute part numbers are not available in the provided documentation. Consult Infineon technical support for validated cross-reference options.
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