BAP142LX,315

RF Diode Overview

The BAP142LX is a silicon PIN diode housed in a SOD882D (DFN1006D-2) leadless ultra-small plastic surface-mount package. It operates as a high-voltage, current-controlled RF resistor with low losses at very low currents. Key electrical parameters include a maximum reverse voltage of 50 V and a forward current rating of 100 mA. The device exhibits a typical diode capacitance of 0.25 pF at 0 V reverse bias and a forward voltage of 0.95 V at 50 mA. It supports applications up to 3 GHz, featuring very low series inductance of 0.4 nH.

RF Diode Feature Summary

• High voltage, current controlled RF resistor
• Low diode capacitance
• Low losses at very low currents
• Very low series inductance

RF Diode Applications

• RF attenuators
• RF switches

RF Diode Procurement Notes

Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details and availability status. Ensure that the component meets all relevant environmental compliance standards required for the intended design application before finalizing procurement orders.

RF Diode Selection Notes

Select this component for designs requiring minimal parasitic effects in high-frequency circuits. The SOD882D package provides a compact footprint suitable for dense layouts. Evaluate thermal resistance characteristics and ensure adequate heat dissipation paths are incorporated into the PCB design to maintain junction temperature within specified limits during operation.

RF Diode Part Context

This part belongs to NXP Semiconductors' portfolio of planar PIN diodes designed for radio frequency signal control. The SOD882D package represents an evolution from previous leaded or larger surface-mount options, offering reduced physical dimensions while maintaining robust electrical performance for modern communication systems.

RF Diode Replacement Considerations

Consult official substitution guides for compatible alternatives. Verify pinout compatibility and electrical parameter equivalence before replacing existing components in established designs.

RF Diode FAQ

What is the marking code for the BAP142LX?

The binary marking code for the BAP142LX is 1001.

What is the typical charge carrier lifetime when switching from IF = 10 mA to IR = 6 mA?

The typical charge carrier lifetime is 0.11 µs under these conditions.

How does the isolation performance vary with frequency?

Isolation decreases as frequency increases; typical values are -18 dB at 900 MHz, -13 dB at 1800 MHz, and -11 dB at 2450 MHz.