BAP50-02,115

RF Diode Overview

The BAP50-02 is a general-purpose PIN diode manufactured by NXP Semiconductors, housed in an SOD523 surface-mounted plastic package. It features a maximum continuous forward voltage of 50 V and a maximum continuous forward current of 50 mA. The device exhibits low diode capacitance, ranging from 0.22 pF to 0.4 pF at 1 MHz depending on reverse bias. Forward resistance varies with current, measuring up to 40 Ω at 0.5 mA and down to 5 Ω at 10 mA. Total power dissipation is rated at 715 mW with a junction-to-solder point thermal resistance of 85 K/W. Operating temperatures range from -65 °C to +150 °C.

RF Diode Feature Summary

• Low diode capacitance for high-frequency signal handling
• Low diode forward resistance for efficient conduction

RF Diode Applications

• General RF applications

RF Diode Procurement Notes

Verify the component against the official NXP data sheet Rev. 3 (dated November 26, 2018). Confirm that the marking code matches 'K4' and the package type is SOD523. Ensure the part number suffix corresponds to the standard ordering information provided in the manufacturer's documentation to guarantee authenticity and specification compliance.

RF Diode Selection Notes

Select this component for circuits requiring a general-purpose PIN diode in a compact SMD form factor. Consider the specific capacitance values under varying reverse voltages and the forward resistance characteristics at intended operating currents. Verify that the thermal resistance and power dissipation limits align with the system's heat management capabilities.

RF Diode Part Context

This component belongs to the NXP Semiconductors discrete semiconductor portfolio, specifically within the PIN diode category. It is designed as a small surface-mount device suitable for integration into modern electronic assemblies where space constraints are significant. The product specification defines its electrical performance boundaries for general radio frequency usage.

RF Diode Replacement Considerations

Consult the official NXP datasheet for verified substitute part numbers. Do not assume compatibility based solely on package similarity or generic specifications without cross-referencing the manufacturer's replacement guidelines.

RF Diode FAQ

What is the marking code for the BAP50-02?

The marking code for the BAP50-02 is K4.

What is the typical charge carrier lifetime when switching between currents?

The charge carrier lifetime is typically 1.05 µs when switched from IF = 10 mA to IR = 6 mA, measured at IR = 3 mA.

How does the diode capacitance change with reverse voltage?

At 1 MHz, the diode capacitance decreases as reverse voltage increases, dropping from approximately 0.4 pF at 0 V to 0.22 pF at 5 V.