BAP50-03,135

RF Diode Overview

The BAP50-03 is a general-purpose silicon PIN diode housed in an SOD323 (SC-76) surface-mounted package. It features low diode capacitance and low forward resistance, making it suitable for RF applications. Key electrical characteristics include a maximum reverse voltage of 50 V and a forward current rating of 50 mA. At 25 °C, the typical forward voltage is 0.95 V at 50 mA, while reverse leakage current remains below 100 nA at 50 V. Diode capacitance ranges from 0.2 pF to 0.55 pF depending on reverse bias, and forward resistance varies between 3 Ω and 40 Ω based on drive current.

RF Diode Feature Summary

• Low diode capacitance for high-frequency signal handling
• Low diode forward resistance for efficient switching

RF Diode Applications

• General RF applications

RF Diode Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm packaging details. The provided datasheet identifies the base type number as BAP50-03 in an SOD323 package. Confirm that the requested variant matches the required reel or tape specifications before finalizing procurement orders.

RF Diode Selection Notes

Select this component for circuits requiring a compact PIN diode with minimal parasitic capacitance. Ensure the operating junction temperature stays within -65 °C to +150 °C. Verify that the peak reverse voltage and forward current limits are not exceeded during operation to maintain device reliability.

RF Diode Part Context

This part is a discrete silicon PIN diode manufactured by NXP Semiconductors. It belongs to a family of general-purpose PIN diodes designed for small plastic SMD packages. The device is distinct from power management ICs or battery controllers found in other product lines.

RF Diode Replacement Considerations

Check for direct substitutes such as the BAP51-03 or BAP51-02 from NXP, which share similar general-purpose PIN diode descriptions. Verify pinout compatibility and electrical parameter margins before substituting.