RF Diode BAP50-04,215 product image

BAP50-04,215

$0.12
  • Description:RF DIODE PIN 50V 250MW SOT-23
  • Series:-

SKU:906db2a5cec7 Category: Brand:

  
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BAP50-04,215 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP Semiconductors. Its product description is RF DIODE PIN 50V 250MW SOT-23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP50-04,215

  • Description:RF DIODE PIN 50V 250MW SOT-23
  • Series:-
  • Mfr:NXP Semiconductors
  • Package:Bulk
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.5pF @ 5V, 1MHz
  • Resistance @ If, F:5Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):250 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:SOT-23 (TO-236AB)
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP50-04,215

BAP50-04,215

RF Diode Overview

The BAP50-04 is a silicon PIN diode featuring two planar elements in series configuration, housed in an SOT23 small plastic surface-mounted device package. It provides low diode capacitance and low forward resistance for general RF applications. Key electrical characteristics include a maximum reverse voltage of 50 V and a maximum forward current of 50 mA. At 1 MHz with zero bias, the typical diode capacitance is 0.45 pF. The thermal resistance from junction to solder point is typically 220 K/W.

RF Diode Feature Summary

  • Two planar PIN diodes integrated in a single series configuration within a compact SMD package
  • Low diode capacitance suitable for high-frequency signal handling
  • Low diode forward resistance for efficient conduction

RF Diode Applications

  • General RF applications

RF Diode Procurement Notes

Verify the component against the official NXP Semiconductors data sheet (Rev. 3.1) to confirm authenticity and specifications. Ensure the marking code matches the datasheet requirements. Check that the package type corresponds to the SOT23 outline. Confirm compliance with relevant standards before integration into designs.

RF Diode Selection Notes

Select this component when a dual-element series PIN diode is required in a minimal footprint. Consider the 50 V reverse voltage rating and 50 mA forward current limits for circuit design. Evaluate the low capacitance values at specific bias voltages for RF performance requirements. Verify thermal management capabilities based on the junction-to-solder point resistance.

RF Diode Part Context

This part belongs to the BAP50 series of silicon PIN diodes manufactured by NXP Semiconductors. The series includes variants such as the BAP50-02 and BAP50-03, which offer different configurations or characteristics. The BAP50-04 specifically integrates two diodes in series, distinguishing it from single-diode counterparts in the same family.

RF Diode Replacement Considerations

Consult the manufacturer's documentation for officially confirmed substitute part numbers. Do not assume cross-compatibility with other series without verifying pinout, electrical ratings, and package dimensions against the original specification.

RF Diode FAQ

What is the pin configuration of the BAP50-04?

Pin 1 is the anode, Pin 2 is the cathode, and Pin 3 serves as the common connection.

What is the typical diode capacitance at 1 MHz with 0 V reverse bias?

The typical diode capacitance is 0.45 pF under these conditions.

What is the maximum total power dissipation?

The maximum total power dissipation is 250 mW when the solder point temperature is 90 °C or less.

BAP50-04,215BAP50-04,215
$0.12
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