RF Diode BAP51-05W product image

BAP51-05W

  • Description:RF DIODE PIN 50V 240MW SC-70
  • Series:-

SKU:e045c5433c23 Category: Brand:

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BAP51-05W is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 50V 240MW SC-70. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP51-05W

  • Description:RF DIODE PIN 50V 240MW SC-70
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Bulk
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:50 mA
  • Capacitance @ Vr, F:0.35pF @ 5V, 1MHz
  • Resistance @ If, F:2.5Ohm @ 10mA, 100MHz
  • Power Dissipation (Max):240 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:SC-70
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP51-05W

BAP51-05W

RF Diode Overview

The BAP51-05W is a general-purpose silicon PIN diode manufactured by NXP Semiconductors. It features a common-cathode configuration with two integrated diode elements housed in a compact SOT323 (UMT) surface-mount package. The device supports a maximum reverse voltage of 50V and a maximum forward current of 50mA. Key electrical parameters include a typical carrier lifetime of 0.55µs, a maximum diode capacitance of 0.35pF, and a maximum series resistance of 2.5Ω at 10mA forward current. The component operates within a temperature range of -65°C to +150°C.

RF Diode Feature Summary

  • Common-cathode dual-diode architecture for efficient circuit integration
  • Low parasitic capacitance suitable for high-frequency signal handling
  • Compact SOT323 surface-mount footprint for space-constrained designs

RF Diode Applications

  • RF attenuator circuits
  • VHF band mixer applications
  • General-purpose switching functions

RF Diode Procurement Notes

Verify the specific ordering suffix, such as 115 or T/R, to confirm the correct packaging format required for assembly. Ensure the component source is an authorized distributor to guarantee authenticity. Cross-reference the manufacturer part number with official NXP documentation to validate specifications against the intended design requirements before procurement.

RF Diode Selection Notes

Select this component when a low-capacitance PIN diode is required for VHF frequency operations. The common-cathode arrangement simplifies biasing networks compared to discrete single diodes. Verify that the 50V reverse voltage rating meets the peak inverse voltage demands of the specific RF application environment.

RF Diode Part Context

This component belongs to the NXP BAP51 series of PIN diodes, designed primarily for radio frequency applications. It serves as a successor or variant to earlier Philips Semiconductor versions, maintaining compatibility with established RF circuit topologies while offering modern surface-mount packaging options for automated manufacturing processes.

RF Diode Replacement Considerations

Direct substitutes may include other NXP PIN diodes from the same family, such as the BAP50-05W, provided the package and electrical ratings align with the design constraints. Verify pinout compatibility and thermal characteristics when considering alternative manufacturers.

BAP51-05WBAP51-05W

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