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BAP51L,315 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 60V 500MW DFN1006-2. Review the specifications below when checking this part for your BOM.
RF Diode specifications for BAP51L,315
- Description：RF DIODE PIN 60V 500MW DFN1006-2
- Series：-
- Mfr：NXP USA Inc.
- Package：Tape & Reel (TR)
- Diode Type：PIN - Single
- Voltage - Peak Reverse (Max)：60V
- Current - Max：100 mA
- Capacitance @ Vr, F：0.3pF @ 5V, 1MHz
- Resistance @ If, F：1.5Ohm @ 100mA, 100MHz
- Power Dissipation (Max)：500 mW
- Operating Temperature：-65°C ~ 150°C (TJ)
- Package / Case：SOD-882
- Supplier Device Package：DFN1006-2
- Grade：-
- Qualification：-
RF Diode datasheet and documents for BAP51L,315
RF Diode Overview
The BAP51L,315 is a single PIN diode manufactured by NXP Semiconductor. It operates in the S-band and is housed in an SOD-882 surface-mount package with two pins. The device supports a maximum reverse voltage of 60V and a maximum forward current of 100mA. Key electrical parameters include a typical carrier lifetime of 0.55 µs, a maximum diode capacitance of 0.4 pF, and a maximum forward resistance of 1.5 Ω at 100 mA. The component functions within a temperature range of -65 °C to +150 °C.
RF Diode Feature Summary
- Designed for high-frequency attenuation and switching applications in the S-band.
- Utilizes silicon material with a short carrier lifetime for fast switching performance.
- Available in a compact plastic/epoxy SOD-882 package for space-constrained designs.
RF Diode Applications
- RF attenuators
- High-speed switching circuits
RF Diode Procurement Notes
Verify the specific ordering suffix against official NXP documentation to confirm exact packaging and reel specifications. Ensure compliance with RoHS directives as indicated in manufacturer records. Cross-reference the full part number with authorized distributors to confirm availability and authenticity before procurement.
RF Diode Selection Notes
Select this component when a low-capacitance PIN diode is required for S-band operations. The 0.4 pF maximum capacitance and 0.55 µs carrier lifetime make it suitable for high-speed RF switching. Verify that the 60V reverse voltage rating meets the circuit's peak inverse voltage requirements.
RF Diode Part Context
This component belongs to NXP's portfolio of discrete semiconductor diodes. It is specifically categorized under PIN diodes intended for radio frequency applications. The SOD-882 package allows for automated surface-mount assembly, integrating into broader RF front-end modules or control systems.
RF Diode Replacement Considerations
Consult NXP technical support for verified substitute part numbers. Do not assume functional equivalence with other PIN diodes without verifying pinout, capacitance, and voltage ratings against official datasheets.
RF Diode FAQ
What is the maximum reverse voltage rating for the BAP51L?
The maximum reverse voltage (breakdown voltage) is 60 V.
What is the typical carrier lifetime of this PIN diode?
The nominal carrier lifetime is 0.55 µs.
Which frequency band is this component designed for?
The BAP51L is specified for operation in the S-band.
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