RF Diode BAP55L,315 product image

BAP55L,315

$0.35
  • Description:RF DIODE PIN 50V 500MW DFN1006-2
  • Series:-

SKU:13388a162cbf Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BAP55L,315 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 50V 500MW DFN1006-2. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP55L,315

  • Description:RF DIODE PIN 50V 500MW DFN1006-2
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.28pF @ 20V, 1MHz
  • Resistance @ If, F:700mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):500 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:SOD-882
  • Supplier Device Package:DFN1006-2
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP55L,315

BAP55L,315

RF Diode Overview

The BAP55L,315 is a silicon PIN diode manufactured by NXP USA Inc., housed in an SOD-882 leadless ultra-small plastic surface-mount package. It features a single configuration with a maximum reverse voltage of 60V and a maximum forward current of 100mA. The device exhibits a typical carrier lifetime of 0.55µs and a maximum forward voltage of 1.1V. Key electrical parameters include a maximum diode capacitance of 0.4pF and a maximum series resistance of 1.5Ω at 100mA. Operating temperatures range from -65°C to +150°C.

RF Diode Feature Summary

  • Planar PIN diode structure designed for high-frequency applications
  • Ultra-small leadless SMD package for compact circuit layouts
  • Optimized carrier lifetime for efficient switching performance

RF Diode Applications

  • RF attenuators
  • Switching circuits

RF Diode Procurement Notes

Verify the specific ordering code suffix against official NXP documentation to ensure correct package and tape-and-reel specifications. Confirm RoHS compliance status through the manufacturer's environmental declaration. Cross-reference the component with current availability notices as production statuses may change without prior announcement.

RF Diode Selection Notes

Select this component when a low-capacitance PIN diode is required for S-band applications within a minimal footprint. Ensure the design accommodates the 60V reverse voltage limit and 100mA forward current rating. Verify that the operating temperature range meets the system requirements given the wide thermal specification.

RF Diode Part Context

This component belongs to NXP's portfolio of planar PIN diodes intended for RF and microwave functions. It serves as a discrete semiconductor solution for signal control tasks. The SOD-882 package distinguishes it from larger through-hole or standard surface-mount alternatives, targeting dense PCB designs.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided reference data. Consult NXP technical support or authorized distributors for qualified equivalents if this discontinued item is no longer sourced.

BAP55L,315BAP55L,315
$0.35
Buy Now