RF Diode BAP55LX,315 product image

BAP55LX,315

$0.28
  • Description:RF DIODE PIN 50V 135MW DFN1006D2
  • Series:-

SKU:19790819381e Category: Brand:

  
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BAP55LX,315 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 50V 135MW DFN1006D2. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP55LX,315

  • Description:RF DIODE PIN 50V 135MW DFN1006D2
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - Single
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.28pF @ 20V, 1MHz
  • Resistance @ If, F:800mOhm @ 100mA, 100MHz
  • Power Dissipation (Max):135 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:2-XDFN
  • Supplier Device Package:DFN1006D-2
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP55LX,315

BAP55LX,315

RF Diode Overview

The BAP55LX,315 is a silicon PIN diode manufactured by NXP USA Inc., designed for RF signal applications up to 3 GHz. It features a planar structure housed in an SOD882D leadless ultra-small plastic surface-mount package (DFN1006D-2). Key electrical specifications include a maximum reverse voltage of 60 V and a maximum forward current of 100 mA. The device exhibits low diode capacitance of 0.4 pF and low forward resistance of 1.5 Ω at 100 mA. It operates within a temperature range of -65°C to +150°C junction temperature.

RF Diode Feature Summary

  • High-speed switching capability for RF signals
  • Low diode capacitance for minimal signal interference
  • Very low series inductance suitable for high-frequency use
  • Leadless ultra-small plastic SMD package design

RF Diode Applications

  • RF attenuators
  • RF switches
  • Signal switching circuits operating up to 3 GHz

RF Diode Procurement Notes

Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm the specific ordering suffix matches the required packaging format. Check for RoHS compliance status as indicated in official documentation. Ensure storage conditions align with semiconductor handling standards to prevent damage prior to assembly.

RF Diode Selection Notes

Select this component for designs requiring compact footprint and high-frequency performance. The SOD882D package suits space-constrained PCB layouts. Evaluate thermal management requirements given the 150 mW power dissipation limit. Consider the 60 V reverse voltage rating relative to circuit peak voltages to ensure reliable operation under varying load conditions.

RF Diode Part Context

This part belongs to the BAP55 family of silicon PIN diodes from NXP Semiconductors. It shares functional similarities with other devices in the series but is distinguished by its specific packaging and electrical characteristics. The product is identified by the base number BAP55 with the trailing comma-separated code indicating tape-and-reel packaging configuration.

RF Diode Replacement Considerations

Publicly confirmed substitute part numbers are not available in the provided source material. Engineers should consult NXP's official product selector tools or datasheet cross-reference sections for verified alternatives that match the SOD882D package and 60V/100mA specifications.

BAP55LX,315BAP55LX,315
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