BAP65-03,115

RF Diode Overview

The BAP65-03 is a planar silicon PIN diode housed in an SOD323 surface-mount package. It features a continuous reverse voltage rating of 30 V and a maximum forward current of 100 mA, with total power dissipation limited to 500 mW at a solder point temperature of 90 °C. Key electrical characteristics include a typical forward voltage of 0.9 V at 50 mA and low capacitance ranging from 0.375 pF to 0.9 pF depending on reverse bias. The device exhibits very low series inductance of 1.5 nH and minimal insertion loss, making it suitable for high-frequency RF applications.

RF Diode Feature Summary

• AEC-Q101 qualified for automotive reliability
• Low diode capacitance and forward resistance
• Very low series inductance design

RF Diode Applications

• RF attenuators and switches
• Bandswitch for TV tuners
• Series diode for mobile communication transmit/receive switch

RF Diode Procurement Notes

Verify the specific ordering suffix against official NXP documentation to confirm packaging details and reel specifications. Ensure compliance with RoHS directives and check for any recent product change notices that may affect availability or manufacturing location before finalizing procurement orders.

RF Diode Selection Notes

Select this component when designing circuits requiring low parasitic inductance and capacitance for frequencies up to several gigahertz. Consider the thermal resistance of 120 K/W and junction temperature limits when determining heat dissipation requirements for high-current switching operations.

RF Diode Part Context

This silicon PIN diode belongs to NXP's portfolio of discrete semiconductor components designed for radio frequency control. It serves as a current-controlled RF resistor, providing efficient signal path switching with minimal signal degradation in compact electronic systems.

RF Diode Replacement Considerations

Consult official NXP substitution guides for verified alternatives. Generic replacements may not match the specific AEC-Q101 qualification or the precise parasitic parameters required for high-frequency RF performance.

RF Diode FAQ

What is the marking code for the BAP65-03?

The marking code is D3, with a marking bar indicating the cathode.

What is the typical charge carrier lifetime?

The typical charge carrier lifetime is 0.17 µs under specified test conditions.

How does reverse voltage affect diode capacitance?

Diode capacitance decreases as reverse voltage increases, ranging from approximately 0.9 pF at 1 V to 0.375 pF at 20 V.