BAP65-05

RF Diode Overview

The BAP65-05 is a silicon PIN diode manufactured by NXP Semiconductors, housed in a surface-mount package. It features a common cathode configuration with two internal elements. Key electrical parameters include a minimum breakdown voltage of 30 V and a nominal diode capacitance of 0.7 pF. The device exhibits a maximum forward resistance of 0.95 Ω when tested at 5 mA and 100 MHz. The nominal minority carrier lifetime is specified as 0.17 µs. It operates at a maximum temperature of 150 °C and complies with RoHS standards using matte tin terminals.

RF Diode Feature Summary

• Common cathode dual-element PIN diode structure
• Low capacitance design for RF switching applications
• Surface-mount packaging for automated assembly

RF Diode Applications

• RF switching circuits
• Attenuator modules
• Phase shifters

RF Diode Procurement Notes

Verify the specific ordering code against the manufacturer's current product specification to ensure compatibility with required pin configurations and terminal finishes. Confirm that the component meets all relevant environmental compliance standards for the intended deployment region before finalizing procurement orders.

RF Diode Selection Notes

Select this component based on its low capacitance value and fast switching characteristics suitable for high-frequency operations. Ensure the circuit design accommodates the 30 V breakdown voltage limit and the thermal constraints associated with the 150 °C maximum operating temperature rating.

RF Diode Part Context

This part belongs to the BAP series of silicon PIN diodes from NXP Semiconductors. These components are engineered for radio frequency applications requiring precise control of signal paths through rapid switching capabilities.

RF Diode Replacement Considerations

Consult official substitution lists for equivalent PIN diodes with matching capacitance and breakdown voltage specifications. Verify pinout compatibility and thermal performance before implementing any alternative components.