RF Diode BAP70AM,115 product image

BAP70AM,115

$0.43
  • Description:RF DIODE PIN 50V 300MW 6TSSOP
  • Series:-

SKU:5dea6e6943f6 Category: Brand:

  
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BAP70AM,115 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP USA Inc.. Its product description is RF DIODE PIN 50V 300MW 6TSSOP. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAP70AM,115

  • Description:RF DIODE PIN 50V 300MW 6TSSOP
  • Series:-
  • Mfr:NXP USA Inc.
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 2 Pair Series
  • Voltage - Peak Reverse (Max):50V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:0.25pF @ 20V, 1MHz
  • Resistance @ If, F:1.9Ohm @ 100mA, 100MHz
  • Power Dissipation (Max):300 mW
  • Operating Temperature:-65°C ~ 150°C (TJ)
  • Package / Case:6-TSSOP, SC-88, SOT-363
  • Supplier Device Package:6-TSSOP
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAP70AM,115

BAP70AM,115

RF Diode Overview

The BAP70AM,115 is a dual PIN diode integrated circuit manufactured by NXP USA Inc. It features two planar PIN diodes configured in a common cathode arrangement within an SOT323 (SC-70) surface-mount plastic package. The device is designed for high-voltage applications with a breakdown voltage of 50V and low diode capacitance characteristics. Key electrical parameters include a maximum forward resistance of 100 ohms at a test current of 0.5 mA and a nominal diode capacitance of 0.6 pF. The component operates at a maximum junction temperature of 150°C and complies with RoHS3 standards.

RF Diode Feature Summary

  • Dual planar PIN diodes in a common cathode configuration
  • High voltage capability with 50V breakdown rating
  • Low diode capacitance for high-frequency performance
  • Compact SC-70 surface-mount packaging

RF Diode Applications

  • RF switching circuits
  • Attenuator modules
  • Phase shifters
  • Antenna switching systems

RF Diode Procurement Notes

Verify the specific suffix '115' corresponds to the tape-and-reel packaging format when sourcing. Confirm RoHS3 compliance status through official manufacturer documentation prior to integration. Ensure ESD handling procedures are followed during assembly due to the small signal nature of the component.

RF Diode Selection Notes

Select this component for designs requiring compact dual-diode solutions with low parasitic capacitance. Compare the 0.6 pF capacitance value against system frequency requirements. Verify that the 50V breakdown voltage meets the peak reverse voltage conditions of the target application circuit.

RF Diode Part Context

This part belongs to the BAP70 series of dual PIN diodes from NXP Semiconductors. It shares the same internal die structure as variants like the BAP70-05 but differs in packaging or reel specifications indicated by the suffix. The series is widely used in telecommunications infrastructure for RF signal control.

RF Diode Replacement Considerations

Direct substitutes include the BAP70-05, which shares identical electrical characteristics and pinout. Verify package compatibility between SOT323 and alternative footprints before substitution.

BAP70AM,115BAP70AM,115
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