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BAR 64-02V E6327 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 150V 250MW SC79-2. Review the specifications below when checking this part for your BOM.
The BAR64-02V is a silicon PIN diode manufactured by Infineon Technologies, designed for high-voltage current-controlled RF applications. It operates within a frequency range from 1 MHz to 6 GHz and features very low capacitance at zero volt reverse bias, typically 0.17 pF above 1 GHz. The device supports a maximum reverse voltage of 150 V and a forward current of 100 mA, with a total power dissipation of 250 mW. Its low forward resistance is approximately 2.1 Ω at 10 mA. The component is housed in an SC79 surface-mount package and is qualified according to AEC-Q101 standards.
Verify the specific ordering suffix E6327 against official Infineon documentation to confirm the exact tape-and-reel configuration and marking details. Ensure that the SC79 package dimensions align with the target PCB footprint requirements before finalizing procurement orders.
Select this component when designing circuits requiring high isolation and low insertion loss across the 1 MHz to 6 GHz spectrum. Consider the thermal resistance limits and junction temperature constraints if operating near the maximum rated power dissipation levels in compact layouts.
This part belongs to the BAR64 series of single silicon PIN diodes produced by Infineon Technologies. The series includes various configurations such as common cathode, common anode, and parallel pairs, offering flexibility for different RF control circuit topologies while maintaining consistent core performance metrics.
BAR64-02LRH serves as a leadless alternative within the same family, though it lacks AEC-Q101 qualification. Other variants like BAR64-03W or BAR64-04 offer different package types but may require schematic adjustments due to distinct pinout or electrical parameter differences.
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