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BAR81WH6327XTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE STANDAR 30V 100MW SOT343-4. Review the specifications below when checking this part for your BOM.
The BAR81WH6327XTSA1 is a PIN diode from Infineon Technologies, designed for RF applications. It features a maximum repetitive reverse voltage of 30 V and a forward current rating of 100 mA. The device exhibits a low maximum series resistance of 1 ohm at medium frequencies and a peak forward voltage of 1 V. Its junction capacitance is limited to 1 pF. Operating within a temperature range of -55°C to +150°C, it utilizes silicon technology in an SMD/SMT SOT-343-4 package with a power dissipation capacity of 250 mW.
Verify the specific suffix H6327XTSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure the sourcing channel provides valid traceability for automotive or industrial grade requirements if applicable. Cross-reference the Mouser part number 726-bar81wh6327 for accurate catalog identification during procurement processes.
Select this component when a low-capacitance PIN diode is required for RF paths. The 30 V reverse voltage rating suits low-power switching tasks. Verify that the SOT-343-4 footprint matches the PCB layout constraints. Confirm thermal management capabilities align with the 250 mW power dissipation limit under expected operating conditions.
This part belongs to the BAR81 series of RF PIN diodes manufactured by Infineon Technologies. The series is characterized by silicon construction and surface-mount packaging suitable for automated assembly. The specific model integrates standard RF performance metrics into a compact form factor designed for integration into modern electronic communication devices.
Publicly confirmed substitute part numbers are not available in the provided source material. Consult official Infineon replacement guides or distributor cross-reference tools for verified alternatives.
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