BAR9002LSE6327XTSA1

RF Diode Overview

The BAR9002LSE6327XTSA1 is a silicon deep trench PIN diode from the BAR90 series, manufactured by Infineon Technologies. It utilizes a TSSLP-2-1 leadless package and is optimized for low bias current antenna switches in handheld applications. Key electrical parameters include a reverse voltage of 80 V, a forward current rating of 100 mA, and a total power dissipation of 250 mW. The device exhibits very low capacitance at zero volt reverse bias, typically 0.19 pF at 1 GHz. Forward resistance is typically 1.3 Ω at a forward current of 3 mA. The component operates within a temperature range of -55°C to +125°C.

RF Diode Feature Summary

• Optimized for low bias current antenna switching in handheld devices
• Very low capacitance at zero volt reverse bias above 1 GHz
• Low forward resistance characteristics
• Improved ON/OFF mode harmonic distortion balance

RF Diode Applications

• Antenna switches in handheld applications
• RF signal routing circuits
• Low bias current RF control systems

RF Diode Procurement Notes

Verify the exact ordering suffix against official Infineon documentation to confirm package type and marking codes. Confirm availability status as distribution channels may list obsolete or end-of-life components. Ensure compliance with RoHS standards if required by the specific manufacturing process. Cross-reference datasheet revision dates to ensure accurate thermal and electrical specifications are applied during design validation.

RF Diode Selection Notes

Select this component when designing RF antenna switches that require minimal bias current consumption. The low capacitance at zero reverse bias makes it suitable for high-frequency applications above 1 GHz. Consider the 80 V reverse voltage rating for appropriate circuit protection levels. Evaluate the thermal resistance requirements based on the specific PCB layout and ambient operating conditions to ensure junction temperatures remain within safe limits.

RF Diode Part Context

This part belongs to the BAR90 series of silicon deep trench PIN diodes produced by Infineon Technologies. The series includes variants such as BAR90-02LRH and BAR90-098LRH, which share similar electrical characteristics but differ in package configurations like TSLP-2-7 or TSLP-4-7. These components are specifically engineered for RF applications requiring fast switching and low distortion.

RF Diode Replacement Considerations

Direct substitutes within the same family include BAR90-02LRH (TSLP-2-7 package) and BAR90-098LRH (TSLP-4-7 anti-parallel pair). Verify pinout compatibility and physical footprint dimensions before substitution. Electrical parameters such as breakdown voltage and capacitance should be compared to ensure equivalent performance in the target RF application.