ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
BAT 62-02W E6327 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 40V 100MW SCD80. Review the specifications below when checking this part for your BOM.
RF Diode specifications for BAT 62-02W E6327
- Description：DIODE SCHOTTKY 40V 100MW SCD80
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR),Cut Tape (CT)
- Diode Type：Schottky - Single
- Voltage - Peak Reverse (Max)：40V
- Current - Max：20 mA
- Capacitance @ Vr, F：0.6pF @ 0V, 1MHz
- Resistance @ If, F：-
- Power Dissipation (Max)：100 mW
- Operating Temperature：150°C (TJ)
- Package / Case：SC-80
- Supplier Device Package：SCD-80
- Grade：-
- Qualification：-
RF Diode datasheet and documents for BAT 62-02W E6327
RF Diode Overview
The BAT 62-02W E6327 is a single silicon Schottky diode from the BAT62 series, designed for low barrier detector applications up to GHz frequencies. It features a reverse voltage of 40 V and a forward current rating of 20 mA with a total power dissipation of 100 mW. The device operates within a junction temperature range of -55 °C to +150 °C. Electrical characteristics include a typical forward voltage of 0.58 V at 2 mA and a maximum reverse current of 10 µA at 40 V. It utilizes an SCD80 package configuration.
RF Diode Feature Summary
- Low barrier design optimized for high-frequency detector applications
- Qualified according to AEC Q101 automotive standards
- RoHS compliant Pb-free packaging
RF Diode Applications
- High-frequency detectors operating in the GHz range
- Automotive electronic circuits requiring AEC Q101 qualification
- RF signal processing components
RF Diode Procurement Notes
Verify component authenticity through official Infineon channels or authorized distributors. Confirm that the ordering suffix matches the specific SCD80 package variant. Ensure compliance with RoHS directives and check for any recent product discontinuation notifications prior to finalizing procurement orders.
RF Diode Selection Notes
Select this component when a single Schottky diode with low barrier characteristics is required for GHz frequency detection. The SCD80 package suits compact surface-mount designs. Verify thermal resistance limits against the expected ambient temperature conditions to ensure safe operation within the specified junction temperature range.
RF Diode Part Context
This part belongs to the broader BAT62 series of silicon Schottky diodes manufactured by Infineon Technologies. The series includes various configurations such as anti-parallel pairs and parallel pairs housed in different packages like SOT-143, TSLP, and SOD323. The BAT 62-02W specifically denotes the single-diode variant in the SCD80 leadless package.
RF Diode Replacement Considerations
BAT62-02L (TSLP-2-1 package)
RF Diode FAQ
What is the maximum reverse voltage rating?
The maximum reverse voltage (VR) rating is 40 V.
What is the typical forward voltage drop?
The typical forward voltage (VF) is 0.58 V at a forward current of 2 mA.
Is this component suitable for automotive applications?
Yes, the component is qualified according to the AEC Q101 standard.
Explore related parts through Diodes, Discrete Semiconductor Products, all product categories, ChipApex homepage.
