BAT1504RE6152HTSA1

$0.55

Description：RF DIODE SCHOTTKY 4V PG-SOT23
Series：-

SKU:b2a0166ae61e Category: RF Diodes Brand: Infineon Technologies

Consult the customer manager about the wholesale price.

consultation hotline：86-132-6715-2157

email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.

Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Product introduction

BAT1504RE6152HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE SCHOTTKY 4V PG-SOT23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1504RE6152HTSA1

Description：RF DIODE SCHOTTKY 4V PG-SOT23
Series：-
Mfr：Infineon Technologies
Package：Tape & Reel (TR),Cut Tape (CT)
Diode Type：Schottky - 1 Pair Series Connection
Voltage - Peak Reverse (Max)：4V
Current - Max：110 mA
Capacitance @ Vr, F：0.25pF @ 0V, 1MHz
Resistance @ If, F：18Ohm @ 5mA, 1MHz
Power Dissipation (Max)：-
Operating Temperature：150°C (TJ)
Package / Case：TO-236-3, SC-59, SOT-23-3
Supplier Device Package：PG-SOT23
Grade：-
Qualification：-

RF Diode datasheet and documents for BAT1504RE6152HTSA1

BAT1504RE6152HTSA1

RF Diode Overview

The BAT1504RE6152HTSA1 is a reverse series silicon RF Schottky diode pair from Infineon Technologies, designed for high-frequency applications up to 12 GHz. It features an integrated on-chip guard ring for over-voltage protection and low barrier height characteristics. The device operates within a temperature range of -55 °C to +150 °C and is housed in an industry-standard SOT-23-3 package. Key electrical parameters include a maximum reverse voltage (VR) of 4 V, a forward current (IF) rating of 110 mA, and a total power dissipation (PTOT) of 100 mW at a soldering point temperature of 77 °C. Typical capacitance is 0.26 pF at 0 V reverse bias, with a typical inductance of 1.5 nH.

RF Diode Feature Summary

Low inductance design suitable for high-frequency signal processing
Integrated on-chip guard ring provides over-voltage protection
Low junction capacitance minimizes signal loss at microwave frequencies

RF Diode Applications

Satellite communication systems
Low noise blocks for Ku bands
Security system detectors

RF Diode Procurement Notes

Verify the component against the official datasheet specifications before integration. Confirm that the SOT-23-3 package dimensions align with the PCB footprint requirements. Ensure handling procedures account for ESD sensitivity as indicated in the documentation. Validate thermal management strategies to maintain junction temperatures within the specified limits during operation.

RF Diode Selection Notes

Select this component when designing circuits requiring mixer or detector functions at frequencies approaching 12 GHz. The low forward voltage drop and minimal capacitance are critical for maintaining signal integrity in sensitive RF paths. Consider the reverse series configuration for balanced detection applications where matched diode characteristics are necessary.

RF Diode Part Context

This part belongs to the BAT15-04R family of reverse series silicon RF Schottky diodes. It shares functional similarities with other devices in the series but is distinguished by its specific ordering code and packaging variant. The product line focuses on providing reliable performance for satellite and security applications requiring robust RF signal handling capabilities.