BAT15099E6433HTMA1

RF Diode Overview

The BAT15099E6433HTMA1 is an RF Schottky diode manufactured by Infineon Technologies, designed for high-frequency applications. It features a maximum repetitive reverse voltage of 4V and a forward current rating of 110mA. The device operates within a junction temperature range up to 150°C and has a power dissipation capacity of 100mW. Packaged in a PG-SOT-143-3D format, it contains two independent diodes suitable for compact circuit designs.

RF Diode Feature Summary

• Dual independent Schottky barrier rectifier configuration
• Optimized for radio frequency signal processing
• Low forward voltage drop characteristics

RF Diode Applications

• RF mixing circuits
• Signal detection systems
• High-frequency switching applications

RF Diode Procurement Notes

Verify the specific package variant and electrical tolerances against the official Infineon datasheet before integration. Confirm that the 4V reverse voltage limit aligns with the target circuit requirements. Ensure thermal management supports the 100mW dissipation rating under operating conditions. Cross-reference pinout details for the PG-SOT-143-3D footprint to prevent assembly errors.

RF Diode Selection Notes

Select this component when low-voltage RF signal handling is required. The dual-diode structure offers space efficiency compared to discrete solutions. Consider the 4V limit for reverse bias scenarios. Evaluate thermal constraints given the small package size. This part suits designs prioritizing high-speed switching over high-power rectification.

RF Diode Part Context

This component belongs to Infineon's RF diode portfolio, specifically engineered for communication and signal processing hardware. The BAT15 series focuses on Schottky technology for minimal capacitance and fast response times. The E6433 suffix indicates specific tape-and-reel packaging standards used by the manufacturer for automated surface-mount production lines.

RF Diode Replacement Considerations

BAT15099E6433XT