RF Diode BAT1704WE6327HTSA1 product image

BAT1704WE6327HTSA1

  • Description:DIODE SCHOTTKY 4V 150MW SOT323-3
  • Series:-

SKU:f8e402f761d5 Category: Brand:

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BAT1704WE6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTTKY 4V 150MW SOT323-3. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1704WE6327HTSA1

  • Description:DIODE SCHOTTKY 4V 150MW SOT323-3
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR)
  • Diode Type:Schottky - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):4V
  • Current - Max:130 mA
  • Capacitance @ Vr, F:0.75pF @ 0V, 1MHz
  • Resistance @ If, F:15Ohm @ 5mA, 10kHz
  • Power Dissipation (Max):150 mW
  • Operating Temperature:150°C (TJ)
  • Package / Case:SC-70, SOT-323
  • Supplier Device Package:PG-SOT323
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT1704WE6327HTSA1

BAT1704WE6327HTSA1

RF Diode Overview

The BAT1704WE6327HTSA1 is a silicon Schottky diode manufactured by Infineon Technologies, designed for radio frequency applications. It features a dual series configuration housed in a PG-SOT323 (SOT-323) surface-mount package. Key electrical parameters include a maximum repetitive reverse voltage of 4 V and a forward current rating of 130 mA. The device exhibits a typical forward voltage of 425 mV and a low junction capacitance of 0.75 pF at 0 V bias. It operates within a temperature range of -55 °C to +150 °C with a maximum power dissipation of 150 mW.

RF Diode Feature Summary

  • Low junction capacitance suitable for high-frequency RF signal processing
  • Dual series configuration for compact circuit integration
  • Automotive qualification compliant with AEC-Q100 standards

RF Diode Applications

  • RF mixing and detection circuits
  • Signal demodulation in communication systems
  • Clamping and protection in RF front-ends

RF Diode Procurement Notes

Verify the specific suffix 'W' against official Infineon documentation to confirm the SOT-323 packaging variant, as standard BAT1704 parts may utilize different housings. Ensure compatibility with automated pick-and-place equipment due to the small form factor. Cross-reference the E6327 ordering code with manufacturer databases to validate current production status and availability channels.

RF Diode Selection Notes

Select this component when low capacitance is critical for maintaining signal integrity in RF paths. The 4 V reverse voltage limit requires careful consideration of peak inverse voltages in the application circuit. Compare the 130 mA forward current capability against load requirements to ensure adequate margin under thermal stress conditions.

RF Diode Part Context

This part belongs to the BAT17 series of silicon Schottky diodes optimized for RF performance. It shares functional similarities with other BAT17 variants but differs in packaging and specific electrical tolerances. The series is widely used in consumer electronics and automotive infotainment systems requiring efficient rectification at high frequencies.

RF Diode Replacement Considerations

BAT1704E6327HTSA1 is listed as an alias in distributor records, indicating potential interchangeability depending on packaging requirements. Verify pinout and thermal characteristics before substitution.

BAT1704WE6327HTSA1BAT1704WE6327HTSA1

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