BAT1705E6327HTSA1

RF Diode Overview

The BAT1705E6327HTSA1 is a Schottky barrier diode manufactured by Infineon Technologies, designed for high-speed switching applications. It features a dual common cathode configuration within a compact SOT-323 (SC-70) surface-mount package. The device is rated for a maximum repetitive peak reverse voltage of 30 V and an average forward rectifier current of 200 mA. Key electrical parameters include a low forward voltage drop of approximately 480 mV at 100 mA and a maximum reverse leakage current of 10 µA at the rated voltage. It operates reliably across a junction temperature range from -55 °C to +150 °C and meets AEC-Q101 automotive qualification standards.

RF Diode Feature Summary

• Dual common cathode configuration enables efficient space-saving circuit designs
• Low forward voltage drop minimizes power loss in signal paths
• High thermal stability supports operation up to 150 °C junction temperature
• Automotive-grade reliability compliant with AEC-Q101 standards

RF Diode Applications

• RF mixing and detection circuits
• Clamping and protection in high-speed digital lines
• OR-ing configurations in battery-powered devices

RF Diode Procurement Notes

Verify the complete ordering code including suffixes against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and specific lot traceability requirements prior to procurement. Cross-reference the manufacturer part number with authorized distributor catalogs to validate authenticity and avoid counterfeit components.

RF Diode Selection Notes

Select this component when a small-footprint dual Schottky diode is required for low-voltage signal processing. Ensure the 30 V reverse voltage rating exceeds the peak inverse voltage in the target application. Verify that the 200 mA current capacity aligns with the circuit's load requirements and thermal management capabilities.

RF Diode Part Context

This component belongs to the BAS/BAT series of small-signal Schottky diodes from Infineon. It shares the SC-70 package form factor with other variants like the BAS16 or BAT54 series but offers distinct electrical characteristics tailored for specific RF and logic interface applications. The E6327HTSA1 suffix indicates specific binning and packaging details defined by the manufacturer.

RF Diode Replacement Considerations

Direct replacements must match the SOT-323/SC-70 package and dual common cathode topology. Verify that substitute parts meet or exceed the 30 V reverse voltage and 200 mA forward current ratings. Check compatibility of forward voltage and leakage current specifications to ensure no performance degradation in sensitive RF or logic circuits.