RF Diode BAT1804E6327HTSA1 product image

BAT1804E6327HTSA1

$0.62
  • Description:RF DIODE PIN 35V PG-SOT23
  • Series:BAT18

SKU:3a0079395a2c Category: Brand:

  
  • Quantity
    • -
    • +
  •    
ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

BAT1804E6327HTSA1 is listed in the RF Diode range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is RF DIODE PIN 35V PG-SOT23. Review the specifications below when checking this part for your BOM.

RF Diode specifications for BAT1804E6327HTSA1

  • Description:RF DIODE PIN 35V PG-SOT23
  • Series:BAT18
  • Mfr:Infineon Technologies
  • Package:Tape & Reel (TR),Cut Tape (CT)
  • Diode Type:PIN - 1 Pair Series Connection
  • Voltage - Peak Reverse (Max):35V
  • Current - Max:100 mA
  • Capacitance @ Vr, F:1pF @ 20V, 1MHz
  • Resistance @ If, F:-
  • Power Dissipation (Max):-
  • Operating Temperature:150°C (TJ)
  • Package / Case:TO-236-3, SC-59, SOT-23-3
  • Supplier Device Package:PG-SOT23
  • Grade:-
  • Qualification:-

RF Diode datasheet and documents for BAT1804E6327HTSA1

BAT1804E6327HTSA1

RF Diode Overview

The BAT1804E6327HTSA1 is a silicon RF switching diode from the BAT18 series, manufactured by Infineon Technologies. It utilizes a PIN diode structure housed in an SOT-23 package with a series configuration. The device features a maximum reverse voltage of 35 V and a forward current rating of 100 mA. Key electrical parameters include a typical forward voltage of 0.92 V at 100 mA, a maximum reverse current of 20 nA at 20 V, and a typical diode capacitance of 0.75 pF at 1 MHz. It exhibits a low forward resistance of 0.4 Ω at 100 MHz and operates within a temperature range of -55 °C to +125 °C.

RF Diode Feature Summary

  • PIN diode architecture designed for low-loss VHF/UHF switching applications above 10 MHz
  • Low forward resistance characteristic suitable for high-frequency signal routing
  • Minimal diode capacitance to maintain signal integrity in RF circuits

RF Diode Applications

  • VHF and UHF RF switching circuits
  • Signal routing in communication systems
  • High-frequency attenuation or gain control modules

RF Diode Procurement Notes

Verify the specific ordering suffix E6327HTSA1 against official Infineon documentation to confirm packaging details and compliance status. Ensure the component matches the required AEC-Q100 qualification if automotive application is intended, as standard datasheets may not explicitly list this for all variants. Cross-reference the manufacturer part number with authorized distributors to prevent counterfeit components.

RF Diode Selection Notes

Select this component when low insertion loss and fast switching are required for frequencies exceeding 10 MHz. Compare the 0.75 pF capacitance and 0.4 Ω forward resistance against alternative Schottky diodes if lower leakage or higher current handling is needed. Consider the SOT-23 footprint constraints and thermal resistance limits during PCB layout design.

RF Diode Part Context

This component belongs to the BAT18 series, which includes the BAT18-05 variant. Both devices share identical electrical characteristics and package dimensions but differ in internal marking codes (AUs vs ASs). The series is engineered specifically for RF applications requiring minimal signal degradation.

RF Diode Replacement Considerations

BAT18-05 serves as a direct functional equivalent within the same series, distinguished only by its marking code. Verify pinout compatibility and thermal performance before substituting.

BAT1804E6327HTSA1BAT1804E6327HTSA1
$0.62
Buy Now