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BAT18,235 is listed in the RF Diode range at ChipApex. The manufacturer field lists NXP Semiconductors. Its product description is RF DIODE STANDARD 35V SOT23. Review the specifications below when checking this part for your BOM.
The BAT18,235 is a planar high-performance band-switching diode manufactured by NXP Semiconductors. It is housed in a small rectangular SOT-23 surface-mount plastic package with three leads. The device supports a maximum continuous reverse voltage of 35 V and a continuous forward current of 100 mA. Key electrical characteristics include a low diode capacitance of up to 1.0 pF at 20 V reverse bias and 1 MHz frequency, and a low diode forward resistance of 0.7 Ω maximum at 5 mA forward current and 200 MHz. The junction temperature range extends from -55 °C to +125 °C.
Verify the specific ordering suffix against the manufacturer's current catalog to confirm packaging details such as tape and reel specifications. Confirm that the component status remains active or qualified for production before initiating design-in processes. Cross-reference the marking code '10' on the physical device to ensure authenticity and traceability to the correct datasheet revision.
Select this component when designing circuits requiring low capacitance and low forward resistance for RF band switching. Ensure the operating conditions remain within the specified absolute maximum ratings, particularly the 35 V reverse voltage limit and 100 mA forward current capacity. Consider the thermal resistance values if mounting density on FR4 substrates is high.
The BAT18 belongs to the family of silicon planar diodes originally developed by Philips Semiconductors. It is specifically engineered as a pin diode for use as a low-loss switch in Very High Frequency (VHF) and Ultra High Frequency (UHF) ranges. The SOT-23 package allows for compact surface-mount integration in modern electronic assemblies.
Check for direct replacements from other manufacturers offering identical SOT-23 pinouts and matching electrical parameters for RF switching. Verify compatibility regarding forward voltage drop and capacitance levels to maintain circuit performance without redesign.
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