BAT2402LSE6327XTSA1

RF Diode Overview

The BAT2402LSE6327XTSA1 is a single silicon RF Schottky diode manufactured by Infineon Technologies. It features an integrated on-chip guard ring for over-voltage protection and utilizes a TSSLP-2-1 package with dimensions of 0.62 mm x 0.32 mm x 0.31 mm. The device operates within a junction temperature range of -55°C to +150°C and supports a maximum reverse voltage of 4 V and forward current of 110 mA. Key electrical parameters include a typical breakdown voltage of 4 V at 10 μA, a maximum reverse current of 5 μA at 1 V, and a typical capacitance of 0.2 pF at 0 V and 1 MHz.

RF Diode Feature Summary

• Low barrier height design enabling low forward voltage and minimal junction capacitance for high-frequency operation up to 24 GHz.
• Integrated on-chip guard ring provides enhanced over-voltage protection capabilities.
• TSSLP-2-1 leadless package offers a small footprint with low inductance characteristics.

RF Diode Applications

• Radar systems and modules
• RF mixers
• RF detectors

RF Diode Procurement Notes

Verify the complete ordering code BAT2402LSE6327XTSA1 against official Infineon documentation before procurement. Confirm that the TSSLP-2-1 package dimensions align with the target PCB layout requirements. Ensure handling procedures account for the device's sensitivity to electrostatic discharge during assembly and storage.

RF Diode Selection Notes

Select this component when designing circuits requiring ultra-low parasitic capacitance and inductance for frequencies approaching 24 GHz. The integrated guard ring makes it suitable for environments where transient over-voltages may occur. Verify thermal management strategies as the total power dissipation is limited to 100 mW under specific soldering point temperature conditions.

RF Diode Part Context

This part belongs to the BAT24-02LS series of single silicon RF Schottky diodes. It is specifically engineered for applications demanding high-speed switching and low signal loss. The device is qualified for industrial applications according to JEDEC standards, ensuring reliability in demanding operational environments.

RF Diode Replacement Considerations

No direct public substitute part numbers are documented in the provided datasheet. Evaluate alternative RF Schottky diodes from other manufacturers based on matching package size, capacitance values, and frequency response specifications.

RF Diode FAQ

What is the purpose of the integrated guard ring?

The integrated guard ring on the chip provides over-voltage protection for the device.

What is the maximum operating frequency for this diode?

The BAT24-02LS is suitable for mixer and detector functions in applications with frequencies as high as 24 GHz.

How does the device handle electrostatic discharge?

The device is ESD sensitive; observe standard handling precautions to prevent damage during assembly and use.