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The BAT54CWT1G is a dual series Schottky barrier diode manufactured by onsemi, housed in an SOT-323 (SC-70) surface-mount package with three pins. It features a common cathode configuration and utilizes silicon technology. Key electrical parameters include a maximum repetitive reverse voltage of 30 V and a continuous forward current rating of 200 mA. The device exhibits a typical forward voltage of 0.35 V at 10 mAdc and a peak non-repetitive forward surge current capability of 600 mA. Reverse leakage current is specified at 2 uA, with a power dissipation limit of 200 mW. The component operates within a temperature range of -55 C to +125 C.
Verify the specific datasheet revision number when sourcing, as electrical characteristics may vary between revisions. Confirm the package marking code matches the official onsemi specification for the SOT-323 form factor. Ensure the supplier provides documentation confirming RoHS compliance and lead-free status. Cross-reference the manufacturer part number to distinguish from similar configurations like common anode variants.
Select this component for designs requiring low forward voltage drop and rapid recovery times in compact layouts. The common cathode arrangement allows for efficient use of board space compared to discrete single diodes. Evaluate thermal management requirements against the 200 mW power dissipation limit. Consider the 30 V reverse voltage rating relative to the circuit's peak inverse voltage conditions.
This component belongs to the BAT54CW series of dual Schottky barrier diodes. It shares the same physical footprint and general functionality as other variants in the family but differs in internal configuration. The series is designed to replace larger through-hole packages in modern portable electronics where miniaturization is critical.
BAT54CTT1
The device contains two Schottky diodes connected in a common cathode configuration.
Yes, the component is available in a Pb-free package compliant with RoHS standards.