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The MDD BAT54S is a surface-mount Schottky barrier diode array housed in an SOT-23 package. It features two independent diodes with a common cathode configuration. The device supports a maximum repetitive peak reverse voltage of 30V and a continuous forward current of 200mA per diode. Electrical characteristics include a maximum reverse leakage current of 2µA at 25V, a typical junction capacitance of 10pF at 1V, and a reverse recovery time of 5ns. The component operates within a junction temperature range of -55°C to +125°C.
Verify the specific manufacturer designation when sourcing, as the BAT54S part number is utilized by multiple semiconductor producers including Nexperia, ON Semiconductor, and Diotec. Confirm that the received components match the required electrical ratings and physical dimensions specified in the official datasheet before integration into production lines.
Select this component for designs requiring low-capacitance signal handling or efficient rectification in compact spaces. The SOT-23 form factor suits automated surface-mount assembly processes. Ensure the circuit design respects the 200mA average forward current limit and the 30V reverse voltage threshold under all operating conditions.
This device belongs to the broader BAT54 series of small-signal Schottky diodes. While the standard BAT54 series includes variants like the BAT54A (series connected) and BAT54C (common anode), the BAT54S specifically denotes the common cathode configuration. This topology allows for distinct control of two separate signal paths sharing a single ground reference.
Direct substitutes include the Nexperia BAT54S-Q and Diotec BAT54S-AQ. These alternatives maintain identical pin configurations and core electrical specifications while potentially offering different automotive qualification statuses or marking codes.
The BAT54S contains two Schottky diodes arranged in a common cathode configuration, featuring two independent anodes and one shared cathode terminal.
It utilizes a low junction capacitance of approximately 10pF and a reverse recovery time of 5ns, making it suitable for ultra-high-speed switching and RF applications.
The device has a maximum power dissipation rating of 200mW at 25°C ambient temperature.