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The BAT54SLT1 is a dual series Schottky barrier diode manufactured by onsemi, designed for high-speed switching applications. It features extremely fast switching speed and low forward voltage of 0.35 V typical at IF = 10 mAdc. The device operates with a maximum reverse voltage of 30 V and a DC forward current of 200 mA. Total capacitance is typically 7.6 pF at VR = 1.0 V and f = 1.0 MHz. Reverse recovery time is 5.0 ns. Power dissipation is 225 mW at TA = 25°C. The junction temperature range is -55°C to +150°C storage and up to 125°C operating.
Verify the specific ordering suffix 'LT1' corresponds to the tape and reel packaging configuration as documented in the official datasheet. Confirm that the component meets RoHS compliance requirements if applicable to your manufacturing process. Ensure the supplier provides traceability documentation consistent with onsemi's quality standards for this preferred device designation.
Select this component when low forward voltage drop and rapid reverse recovery are critical for circuit efficiency. The dual series configuration allows for compact implementation in portable devices. Evaluate thermal management requirements based on the 225 mW power dissipation limit at ambient temperatures above 25°C. Consider the SOT-23 footprint constraints during PCB layout design.
This component belongs to the BAT54 series of Schottky barrier diodes from onsemi. The series utilizes silicon technology packaged in various surface mount formats including SO123, SOD323, SOD523, SOT-23, and SOT-323. The BAT54SLT1 specifically uses the SOT-23 package (CASE 318) and is designated as a preferred device for future use and best overall value within the product line.
BAT54ST
The typical forward voltage is 0.35 Vdc at an forward current of 10 mAdc.
The total capacitance is typically 7.6 pF measured at VR = 1.0 V and f = 1.0 MHz.
Pin 1 is Anode, Pin 2 is Cathode, and Pin 3 is Cathode-Anode.