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BAT54WE6327 is listed in the Single Diodes range at ChipApex. The manufacturer field lists Infineon Technologies. Its product description is DIODE SCHOTT 30V 200MA PGSOT3233. Review the specifications below when checking this part for your BOM.
The BAT54WE6327 is a silicon Schottky diode manufactured by Infineon Technologies, designed for low-loss and fast-recovery applications. It features a maximum DC reverse voltage of 30 V and an average forward current rating of 200 mA. The component exhibits a maximum forward voltage of 800 mV at 100 mA and a reverse leakage current of 2 µA at 25 V. It operates within a junction temperature range of -65 °C to +150 °C and includes a guard ring structure for protection.
Verify the specific suffix WE6327 against official Infineon documentation to confirm exact packaging and tape-and-reel specifications. Ensure compatibility with SOT-323 footprint requirements during PCB layout. Confirm AEC-Q101 qualification status if automotive application is intended. Cross-reference datasheet revision dates to ensure parameter consistency.
Select this component for designs requiring a compact surface-mount Schottky diode with low forward voltage drop. The SOT-323 package suits space-constrained layouts. Verify that the 30 V reverse voltage rating exceeds the circuit's peak inverse voltage. Consider the 200 mA current limit for load requirements.
This part belongs to the BAT54 series of silicon Schottky diodes from Infineon. The series offers various configurations including dual common cathode and single diode options. The BAT54WE6327 specifically denotes the single diode variant in the SOT-323 package, distinct from other series members like BAT54W or BAT54-06.
The maximum operating junction temperature is +150 °C.
Yes, the component is qualified according to AEC-Q101.
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