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The BAT6404E6433HTMA1 is a dual Schottky diode array manufactured by Infineon Technologies, housed in a SOT-23-3 surface-mount package. It features a maximum DC reverse voltage of 40 V and a continuous forward current rating of 250 mA. The device operates within a junction temperature range of -55°C to +150°C and exhibits a typical forward voltage drop of approximately 880 mV at specified currents. Designed for high-speed switching applications, it offers low capacitance characteristics suitable for RF and signal processing circuits.
Verify the specific suffix E6433HTMA1 against official Infineon documentation to ensure correct packaging and tape-and-reel specifications. Confirm RoHS compliance status and lead times directly with authorized distributors, as availability may vary. Always cross-reference the manufacturer's latest datasheet for any updates on recommended soldering profiles or storage conditions prior to implementation.
Select this component when a dual Schottky configuration in a minimal footprint is required for high-frequency signal handling. Ensure the 40V reverse voltage and 250mA current ratings align with circuit demands. Consider the SOT-23-3 thermal performance and parasitic capacitance values relative to other discrete diodes or integrated solutions for optimal system efficiency.
This part belongs to Infineon’s series of silicon Schottky diodes designed for general-purpose and RF applications. The BAT6404 variant specifically integrates two diodes in a single package, offering space-saving advantages over discrete components. It is commonly used in consumer electronics and communication devices requiring fast recovery and low power loss.
BAT6404E6327HTSA1