BAT854AW-QX

Overview

The Nexperia BAT854AW-Q is a planar Schottky barrier dual diode featuring an integrated guard ring for stress protection. It is encapsulated in the SC-70 (SOT323) surface-mount plastic package with three leads. The device supports a maximum reverse voltage of 40 V and a forward current of 200 mA per diode. Typical forward voltage is 550 mV at 100 mA, while reverse current remains low at 0.5 µA under pulsed conditions. Junction temperature ranges from -65 °C to 150 °C.

Feature Summary

• Planar Schottky barrier technology with integrated guard ring for enhanced stress protection
• Very low forward voltage and very low reverse current characteristics
• Qualified according to AEC-Q101 standards for automotive applications
• Encapsulated in a compact SC-70 (SOT323) SMD plastic package

Applications

• Ultra high-speed switching
• Voltage clamping
• Protection circuits
• Blocking diodes
• Low power consumption applications such as hand-held devices

Procurement Notes

Verify the specific ordering suffix against official Nexperia documentation to confirm packaging details and manufacturing site codes. Ensure the component meets AEC-Q101 qualification requirements if intended for automotive use. Cross-reference the marking code '82' followed by the site identifier to validate authenticity. Confirm thermal resistance parameters relative to the specific PCB footprint used in the design.

Selection Notes

Select this component for designs requiring a small form factor dual Schottky configuration. The SC-70 package suits space-constrained layouts. Verify that the 40 V reverse voltage rating aligns with circuit peak inverse voltage requirements. Consider the 200 mA forward current limit for load handling. The AEC-Q101 qualification makes it suitable for automotive environments where reliability is critical.

Part Context

This part belongs to Nexperia's portfolio of Schottky barrier diodes designed for high-efficiency switching. The BAT854 series utilizes planar technology to minimize leakage and forward voltage drops. The inclusion of a guard ring improves robustness against electrical stress. The SC-70 package provides a balance between thermal performance and minimal board area occupation.

Replacement Considerations

Check for direct equivalents within the BAT854 family or other AEC-Q101 qualified dual Schottky diodes in the SOT323 package. Verify pinout compatibility, specifically the common anode configuration. Ensure replacement parts match the 40 V reverse voltage and 200 mA forward current limits.

FAQ

What is the pin configuration for the BAT854AW-Q?

Pin 1 is Cathode 1 (K1), Pin 2 is Cathode 2 (K2), and Pin 3 serves as the Common Anode (A1, A2).

Is the BAT854AW-Q suitable for automotive applications?

Yes, the device is qualified according to the AEC-Q101 standard and is recommended for use in automotive applications.

What is the typical diode capacitance at 1 MHz?

The typical diode capacitance is 20 pF when measured at a reverse voltage of 1 V and a frequency of 1 MHz.