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The BAT854CW-QF is a planar Schottky barrier dual diode from Nexperia, qualified under AEC-Q101 for automotive applications. It features an integrated guard ring for stress protection and is housed in a compact SOT323 (SC-70) surface-mount package. Key electrical parameters include a maximum reverse voltage of 40 V and a forward current rating of 200 mA per diode. The typical forward voltage is 550 mV at 100 mA, with a maximum reverse current of 0.5 µA at 25 V. The device supports junction temperatures up to 150 °C.
Verify the specific ordering suffix against the manufacturer's official documentation to confirm packaging details such as reel size or tape configuration. Ensure the component meets the required AEC-Q101 qualification status if intended for automotive systems. Cross-reference the marking code '83' followed by a manufacturing site code to validate authenticity and traceability during incoming inspection processes.
Select this component when a dual Schottky configuration with low capacitance and fast switching is required in space-constrained designs. The AEC-Q101 qualification makes it suitable for automotive environments where reliability under thermal stress is critical. Consider the 40 V reverse voltage limit and 200 mA forward current capability to ensure adequate margins for the specific circuit load requirements.
This part belongs to Nexperia's portfolio of automotive-grade Schottky barrier diodes. It utilizes planar technology within the SC-70 (SOT323) footprint, balancing performance with minimal board space. The integration of a guard ring enhances robustness against electrostatic discharge and other transient stresses common in electronic assemblies.
BAT854CW-Q
The maximum junction temperature is 150 °C.
It features an integrated guard ring for stress protection.
The typical diode capacitance is 20 pF at 1 V reverse bias and 1 MHz frequency.